InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

Seo, Munkyo; Urteaga, M.; Hacker, J.B.; Young, Adam; Griffith, Z.; Jain, Vibhor; Pierson, R.; Rowell, P.; Skalare, A.; Peralta, Alex; Lin, Robert; Pukala, D.; Rodwell, M.J.W.

doi:10.1109/jssc.2011.2163213

Cited by 136 publications

(52 citation statements)

References 25 publications

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“…THz quantum cascade lasers for semiconductor single oscillators have been studied from the optical device side [6,7,8]. On the electron device side, oscillators with heterostructure bipolar transistors (HBTs), high electron mobility transistors (HEMTs), and Si CMOS transistors are being studied intensively as THz sources [9,10,11,12]. Resonant tunneling diodes (RTDs) are also a good candidate [13,14,15].…”

Section: Introductionmentioning

confidence: 99%

Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

Kanaya

Suzuki

Asada

2013

IEICE Electron. Express

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Terahertz oscillators using AlAs/InGaAs resonant tunneling diodes with deep and thin quantum wells are reported. Although a thin well has been shown to be effective for highfrequency oscillation until now due to a reduced electron dwell time, it caused an increase in bias voltage. We introduce a deep well with indium-rich InGaAs to maintain or even to reduce the bias voltage. Current-voltage and oscillation characteristics are compared between the quantum wells with 3.5-nm-thick In 0.8 Ga 0.2 As and 3-nm-thick In 0.9 Ga 0.1 As. The highest oscillation frequency was 0.96 THz for the former while 1.27 THz for the latter without increase in bias voltage.

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Section: Introductionmentioning

confidence: 99%

Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

Kanaya

Suzuki

Asada

2013

IEICE Electron. Express

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“…The brief fabrication process is as follows. First, a varactor-diode mesa is formed by depositing Pd/Ti/Pd/Au, CH 4 Fig. 4 shows the tuning spectra and the dependence of the oscillation frequency on the bias voltage of the varactor diode.…”

Section: Resultsmentioning

confidence: 99%

“…However, low-temperature operation and a very complicated mechanical tuning system were required. Voltage-controlled oscillators (VCOs) using high-speed transistors in the terahertz range have also been studied [3], [4]. These VCOs can operate under room-temperature conditions; however, the VCO tuning range is less than 5%.…”

Section: Introductionmentioning

confidence: 99%

650-GHz Resonant-Tunneling-Diode VCO With Wide Tuning Range Using Varactor Diode

Kitagawa

Suzuki

Asada

2014

IEEE Electron Device Lett.

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We fabricated a wide-range varactor-tuned terahertz oscillator using a resonant tunneling diode (RTD). An AlAs/InGaAs double-barrier RTD and a varactor-diode mesa were integrated into a 20-µm-long slot antenna. A wide tuning range of ∼11% (70 GHz) of the center frequency of 655 GHz was achieved by changing the depletion-layer capacitance of the varactor diode with a dc sweep from −4 to 0.5 V. The dependence of the output power on the varactor-diode bias was also measured. These experimental results agreed well with theory.

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“…High-efficiency W-band 2:1 and 4:1 series power-combined PAs were designed into a 0.25 m InP HBT process; in this process, HBTs with a 6 m 0.25 m emitter finger exhibit V, GHz, and GHz at a bias condition of V and mA/ m emitter current density [19]. There are three Au interconnect planes, , and (top) of 1 m, 1 m, and 3 m thicknesses.…”

Section: :1 and 4:1 Series Combiners: Design And Resultsmentioning

confidence: 99%

“…86 GHz PAs using the technique were demonstrated using a 0.25 m InP heterojunction bipolar transistor (HBT) technology [18], [19]. A single-stage design using 2:1 series connection exhibited 30.4% peak PAE, 20.37 dBm output power , while two-stage PA with 2:1 series connection exhibited 30.2% PAE and 23.14 dBm from an 824 816 m die.…”

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confidence: 99%

Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns

Park

Daneshgar

Griffith

et al. 2014

IEEE J. Solid-State Circuits

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We present a new millimeter-wave power-combining technique using transmission-line baluns which both connect transistor outputs in series and inductively tune the transistor output capacitances. The baluns are much shorter than a quarter-wavelength , hence are more compact and have less insertion loss than a balun. We introduce one topology providing an even number of series connections, including 2:1 and 4:1, and a second topology providing either an even or odd number of series connections. We then analyze segmented transformer power-combiners as a set of multi-conductor transmission-lines, and explore the relationship between transformer and transmission-line balun powercombiners. We demonstrate the technique with 2:1 and 4:1 seriesconnected designs implemented in a 0.25 m InP HBT process. At 86 GHz, a single-stage power amplifier (PA) using the 2:1 baluns exhibits 30.4% peak PAE, 20.37 dBm output power and 23 GHz 3-dB bandwidth from a 448 816 m die. A two-stage PA using the 2:1 baluns exhibits 30.2% PAE, and 23.14 dBm from an 824 816 m die. At 81 GHz, a two-stage PA with 4:1 series output power-combining exhibits 23.4% PAE, and 26.7 dBm (470 mW) from a 1,080 980 m die.Index Terms-Balun, mm-wave, power amplifier, power combiner, sub-quarter wavelength, transformer, transmission line.

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InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

Cited by 136 publications

References 25 publications

Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

650-GHz Resonant-Tunneling-Diode VCO With Wide Tuning Range Using Varactor Diode

Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns

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