InP HBT Integrated Circuit Technology for Terahertz Frequencies

Urteaga, M.; Seo, Munkyo; Hacker, J.B.; Griffith, Z.; Young, Adam; Pierson, R.; Rowell, P.; Skalare, A.; Rodwell, M.J.W.

doi:10.1109/csics.2010.5619675

Cited by 67 publications

(29 citation statements)

References 9 publications

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“…HEMT results are found in [4], [19], [29], [44]- [46], [55], [56], and [59]- [61], having gate lengths of 30-50 nm. Exciting new results from a Teledyne InP DHBT TMIC indicate 11 dB noise figure at 300 GHz-the best reported noise figure for an HBT S-MMIC to date [12]. Beyond 300 GHz, HEMT amplifiers provide the only reported noise figures to date.…”

Section: A Gain and Noise Figurementioning

confidence: 97%

“…Measured -parameters of a two-cascode-stage chip from the same process are shown in Fig. 14, having more than 10 dB of gain per cascode stage at 320 GHz [12]. Differential amplifier circuits were also designed in this process [32], [33], with one circuit having seven differential stages and a total of 25 dB of gain at 325 GHz [33].…”

Section: Thz Amplifiers Based On Hbts: Mmics and S-mmics-on-wafer mentioning

confidence: 99%

“…Further refinements of the monolithic E-plane probe concept are being developed at Teledyne Scientific [12]. An HBT MMIC amplifier has been designed with integrated waveguide probes, where the entire chip has been etched out to have a nonrectangular shape.…”

Section: B Waveguide Packaging Using Monolithic E-plane Probesmentioning

confidence: 99%

“…The solid curve is the average noise obtained from experimental results from Weinreb below 100 GHz [48]. Data points from Teledyne, NGC, Fraunhofer, HRL, NRAO, and JPL are indicated [4], [12], [29], [44]- [46], [49]- [62]. Lowest noise figures reported for the -band include those from 50-nm gate length mHEMTs from Fraunhofer [50]- [52] and 35-nm gate length HEMTs from a NGC/JPL/NRAO collaboration [55], [56], having a noise figure of 2-2.5 dB.…”

Section: A Gain and Noise Figurementioning

confidence: 99%

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An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

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Section: A Gain and Noise Figurementioning

confidence: 97%

Section: Thz Amplifiers Based On Hbts: Mmics and S-mmics-on-wafer mentioning

confidence: 99%

Section: B Waveguide Packaging Using Monolithic E-plane Probesmentioning

confidence: 99%

Section: A Gain and Noise Figurementioning

confidence: 99%

See 2 more Smart Citations

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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“…Recently, integrated circuits (ICs) operating in terahertz (THz) frequencies such as amplifiers, mixers, oscillators, and detectors have been successfully reported using heterojunction transistors (HBTs) or high-electron mobility transistors (HEMTs) [1,2,3]. THz ICs are generally fabricated using planar transmission lines such as microstrip lines or grounded coplanar waveguides (GCPWs).…”

Section: Introductionmentioning

confidence: 99%

Full <i>H</i>-band waveguide-to-coupled microstrip transition using dipole antenna with directors

Choe

Kim

Jeong

2017

IEICE Electron. Express

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In this paper, we propose low-loss and broadband terahertz (THz) waveguide-to-coupled microstrip transitions using dipole antenna with directors. The simulation and measurement show that insertion/return loss and bandwidth of the waveguide transition can be improved by adding two directors to the basic dipole antenna. The fabricated transition with two directors on a 50 µm-thick quartz substrate exhibits a back-to-back insertion loss of 1.5 dB and return loss better than 15.0 dB across full Hband (220-325 GHz). This belongs to the excellent performance compared with the reported H-band waveguide transitions using dipole antenna.

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Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

Acharyya

2020

Int J Numerical Modelling

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Mutual injection locking of multi-element graphene nanoribbon impact avalanche transit time (G-IMPATT) sources designed to operate at different millimeter-wave (mm-wave) and terahertz frequencies has been studied. Planar circuit is used for implementing the mutual injection locking between adjacent elements of the source operating in parallel-connected-powercombined mode. The static, high frequency and noise simulations of the proposed sources have been carried out by using in-house simulation codes based on self-consistent quantum drift-diffusion model. Results show that mutual injection locking between the adjacent elements forced the sources to oscillate nearly at a single frequency even if significantly high degree of mismatch is present among the elements of the multi-element oscillators. A minor amount of reduction in power out and insignificant deterioration in the noise performance of the multi-element G-IMPATT oscillators have been observed due to the presence of mutual injection locking between the adjacent elements.

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InP HBT Integrated Circuit Technology for Terahertz Frequencies

Cited by 67 publications

References 9 publications

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Full <i>H</i>-band waveguide-to-coupled microstrip transition using dipole antenna with directors

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

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