InP HBT transimpedance amplifier for 43 Gb/s optical link applications

Nosal, Z.; Broekaert, T.P.E.

doi:10.1109/mwsym.2003.1210896

Cited by 4 publications

(2 citation statements)

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“…Since their optical/electrical bandwidth and conversion gain dominate the entire characteristics of the receivers [6], improving these crucial parameters are paramount in high data rate capability of the optical systems. For photoreceiver circuits' implementations, HEMTs [3,[5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, a surface illuminated, low-cost HBT-PIN-based OEICs receiver is undeniably important for high-performance 10 Gb/s EPON optical transmission system. [3,5,6,[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] This work is concerned with the design, characterisation and modelling of high-speed InP/InGaAs PIN-SHBT-based OEIC photoreceivers. More importantly, full-scale characterisations of the receivers using CAD tools prior to the fabricated circuits are invaluable in the prediction of prospective performances and to aid in further optimisations.…”

Section: Introductionmentioning

confidence: 99%

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Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems

Muttlak

Kostakis²,

Abdulwahid

et al. 2019

IET Optoelectronics

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A detailed study of the performance analysis of a low cost PIN/HBT optoelectronic integrated circuit is described. Measured and of 54 and 57GHz for 10×10µm 2 HBTs were achieved for such a large emitter size. The base and collector regions of the transistor were utilized to form a PIN photodiode which has a dc responsivity and quantum efficiency of 0.5 A/W and 0.45 respectively without antireflection coating at a wavelength of 1.55µm. For both active devices, a model was realized taking all parasitic and physical-based impacts into account, for example equivalent circuit of the pads surrounding the devices and transit delay time across the collector depletion region. The simulation results of the discrete passive and active elements showed good agreement with experimental measurements. The OEIC module was implemented in Keysight-advanced design system software with a three stage preamplifier which has a transimpedance gain of 40dBΩ and a-3dB bandwidth of 18GHz. This corresponds to a transimpedance-gain product of 1.8THz. A series peaking inductor technique was used in the design, contributing to an enhancement in the opto-electrical bandwidth of >60%. The optical/electrical response offers a bandwidth of ~15GHz, adequate for up to 20 Gb/s data rate operation.

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