Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems

Abstract

A detailed study of the performance analysis of a low cost PIN/HBT optoelectronic integrated circuit is described. Measured and of 54 and 57GHz for 10×10µm 2 HBTs were achieved for such a large emitter size. The base and collector regions of the transistor were utilized to form a PIN photodiode which has a dc responsivity and quantum efficiency of 0.5 A/W and 0.45 respectively without antireflection coating at a wavelength of 1.55µm. For both active devices, a model was realized taking all parasitic and physical-based impacts into account, for example equivalent circuit of the pads surrounding the devices and transit delay time across the collector depletion region. The simulation results of the discrete passive and active elements showed good agreement with experimental measurements. The OEIC module was implemented in Keysight-advanced design system software with a three stage preamplifier which has a transimpedance gain of 40dBΩ and a-3dB bandwidth of 18GHz. This corresponds to a transimpedance-gain product of 1.8THz. A series peaking inductor technique was used in the design, contributing to an enhancement in the opto-electrical bandwidth of >60%. The optical/electrical response offers a bandwidth of ~15GHz, adequate for up to 20 Gb/s data rate operation.

Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials

“…However, its disadvantage is the low absorption coefficient and detection efficiency at 1550 nm band 5,6 . In recent years, surface plasmons (SPs) have attracted many attentions for their superior optical properties [7][8][9] . By changing the shape, material, distribution and dielectric environment of the subwavelength structure on the metallic film, the resonance wavelength, field enhancement factor, field distribution, radiation and other characteristics of the SPs can be effectively adjusted 10,11 .…”