InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

Parrilla, M.L.; Newson, D.J.; Quayle, J.A.; MacBean, M.D.A.; Skellern, D.J.

doi:10.1049/el:19920052

Cited by 2 publications

(1 citation statement)

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“…Hence, the contribution of thermal generation apparently plays a key role in the increase of the collector current I C . Experimentally, the common-emitter breakdown voltage of our studied device with the collector thickness of 400 nm, at I C = 100 µA (J C = 0.278 kA/cm 2 ), is 8.05 V. Parrilla et al [19] and Matsuoka et al [20] demonstrated the breakdown voltages of 4 and 8 V with the collector thicknesses of 820 and 450 nm, respectively, in their DHBTs. Furthermore, Pan et al [18] demonstrated a 5.3-V breakdown voltage InAlGaAs collector-based DHBT with the collector thickness of 500 nm.…”

Section: Resultsmentioning

confidence: 56%

A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure

Chen

Cheng

Hung

et al. 2008

IEEE Electron Device Lett.

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An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I C = 10 −12 A to I C = 10 −1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f T = 72.7 GHz and the maximum oscillation frequency f max = 50 GHz are achieved for a nonoptimized device (A E = 6 × 6 µm 2 ).

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Section: Resultsmentioning

confidence: 56%