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Introduction Monolithic InP based optoelectronic integrated circuits (OEICs) for operation in the 1.3-1.55um spectral range potentially offer considerable advantages over equivalent hybrid circuits in terms of performance, complexity and cost. The lattice match of In,.,,Gao.4,As (InGaAs) to InP and its favourable electron transport properties make it an ideal field-effect transistor (FET) channel material for use in vertically integrated OEICs. To date, the realisation of many OEICs has been hampered by the lack of suitable transistor technology compatible with both photodetectors and lasers. This paper outlines the developement of one potential candidate, the diffused InGaAs junction FET (JFET)1-3, chosen for its simple structure and relative ease of fabrication. Both transmitter and receiver OEICs have been fabricated using the same basic JFET technology.