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Long-wavelength optoelectronic integrated circuits (OEICS) will be important components for future telecommunications systems, for example as lowcost optical receivers or as nodes on high-speed optical networks. This paper reports the application of selective-area epitaxy (SAE) to the fabrication of monolithic GaAs-on-lnP, long-wavelength OEICS incorporating optical detectors and transmitters together with digital and analogue electronics. We believe that this approach has produced the highest functionality long-wavelength OEICS fabricated to date.

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