“…However, two significant problems must be dealt with in the design of any specific monolithically integrated laser/waveguide structure. Orientation of the rectangular mask along the (110) cleavage planes that are perpendicular to the (100) wafer surface results in reasonably parallel end faces to form the mirrors of the Fabry-Perot cavity. One structure that provides a solution to both of these problems, demonstrated by Hurwitz [12.47], is shown in Fig.…”
“…However, two significant problems must be dealt with in the design of any specific monolithically integrated laser/waveguide structure. Orientation of the rectangular mask along the (110) cleavage planes that are perpendicular to the (100) wafer surface results in reasonably parallel end faces to form the mirrors of the Fabry-Perot cavity. One structure that provides a solution to both of these problems, demonstrated by Hurwitz [12.47], is shown in Fig.…”
“…Ury [52] and Fukuzawa [53] also produced integrated MESFET and laser chips in GaAs. Following these early [54][55][56][57][58][59], receivers [60][61][62][63][64][65], repeaters [66,67] and transceivers [68,69]. These circuits which combine both optical and electronic devices have come to be known as opto-electronic integrated circuits or OEIC's.…”
Section: Monolithically Integrated Direct Modulatorsmentioning
“…In the case of conventional monolithic DFB laser array, the lasing wavelength is controlled by adjusting the grating period pitch in identical optical waveguides. This is usually realized by e-beam lithography [2], which is an expensive and low throughput fabrication technique. Use of holographic interference lithography can be realizable [3].…”
We have developed a novel method to produce different grating periods in one chip and applied this in the fabrication for laser array. The result shows accurate controllability of lasing wavelength and low threshold currents.
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