Monolithically integrated four-channel receiver array using diffused InGaAs JFET technology

In this letter, we describe the realization and the characterization of vertical-cavity semiconductor devices with monolithically integrated detectors for the excitation and detection of fluorescence emission from a fluorophore. These devices can act as excitation sources in forward bias and as detectors in reverse bias mode. Photonic microstructuring is used to control the optical field within the device. Detection is made possible at wavelengths longer than that of emission, with minimum attenuation of the output signal. These characteristics make these devices suitable for fluorescence spectroscopy as they are able to provide an excitation signal and detect the redshifted dye fluorescence.

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Selective-area epitaxy for GaAs-on-InP optoelectronic integrated circuits (OEICs)

O’Sullivan¹,

Allan²,

Birdsall³

et al. 1993

Semicond. Sci. Technol.

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Long-wavelength optoelectronic integrated circuits (OEICS) will be important components for future telecommunications systems, for example as lowcost optical receivers or as nodes on high-speed optical networks. This paper reports the application of selective-area epitaxy (SAE) to the fabrication of monolithic GaAs-on-lnP, long-wavelength OEICS incorporating optical detectors and transmitters together with digital and analogue electronics. We believe that this approach has produced the highest functionality long-wavelength OEICS fabricated to date.

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Monolithically integrated four-channel receiver array using diffused InGaAs JFET technology

Cited by 14 publications

References 0 publications

Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 μm

Monolithic eight-channel photoreceiver array OEICs for HDWDM applications at 1.55 μm

Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

Selective-area epitaxy for GaAs-on-InP optoelectronic integrated circuits (OEICs)

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