InP/InGaAsP Flattened Ring Lasers With Low-Loss Etched Beam Splitters

Parker, John S.; Norberg, Erik; Hung, Yung‐Jr; Kim, Byungchae; Guzzon, Robert S.; Coldren, L.A.

doi:10.1109/lpt.2011.2116777

Cited by 9 publications

(5 citation statements)

References 15 publications

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“…Finally, the nanowires were etched by inductively coupled plasma (ICP) RIE using Cl 2 , H 2 , and Ar chemistry at substrate temperature of 200 ºC. 15 Cross-sectional and top-view field emission scanning electron microscope (FESEM) images of the In 0.53 Ga 0.47 As nanowires are shown in Figure 1b,c. High-aspect-ratio nanowires with diameters of 50 nm to 80 nm were obtained using this process.…”

Section: Methodsmentioning

confidence: 99%

Deterministic Assembly of In_0.53Ga_0.47As p⁺-i-n⁺ Nanowire Junctions for Tunnel Transistors

Kuo

Liu

et al. 2012

ECS Trans.

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Electric-field-assisted deterministic assembly is used to position arrays of p + -i-n + In 0.53 Ga 0.47 As nanowires on a Si substrate for device integration. Forces induced on the solution-suspended wires by a spatially varying, nonuniform electric field determines the position of each wire with respect to lithographic features on the substrate. The electrical properties of the sub-50 nm diameter In 0.53 Ga 0.47 As junctions with a 100 nm thick unintentionally doped channel were characterized after adding source and drain contacts. The junctions showed clear rectification, with a forward bias ideality factors as low as 1.8, and reverse leakage current as small as 20 pA at a −1 V bias. This represents an important step towards demonstrating an In 0.53 Ga 0.47 As-based nanowire tunnel transistor. IntroductionAs metal oxide semiconductor field-effect transistor (MOSFET) power densities continue to rise at each technology node, tunnel field-effect transistors (TFETs) have emerged as an attractive low-power MOSFET replacement candidate. [1][2][3][4][5][6][7] In contrast to MOSFETs, TFETs have been shown to be able to break the 60 mV/dec subthreshold slope (SS) limit 3-4 because the gate controls tunneling through a barrier rather than emission over it, which filters out the high and low energy tails of the Fermi-Dirac distribution. Because nanowire devices have a circular geometry and a confined-volume body, a gate that wraps around the nanowire will provide excellent electrostatic control over the channel. [8][9][10] The improved channel control is expected to both reduce the S and improve the onstate current of nanowire TFETs. 7-8 Moreover, confinement effects such as the volume inversion of carriers 11 or the reduction of transverse momentum conservation requirements 12 may further enhance tunneling probabilities in nanowire systems.Nanowires grown by the vapor-liquid-solid (VLS) method have the capability to reach diameters below 10 nm, 13 and also permit doped junctions and heterojunctions to be formed in situ, allowing for the synthesis of complex device structures. However, it has been difficult to achieve the extremely abrupt profile in the heavily doped source and ECS Transactions, 45 (4) 129-136 (2012) 10.1149/1.3700461 © The Electrochemical Society 129 drain junction required for high performance devices using VLS growth. This paper describes the integration and characterization of In 0.53 Ga 0.47 As p + -i-n + nanowire junctions that are fabricated by high-aspect-ratio reactive ion etching (RIE) of device layers grown by molecular beam epitaxy (MBE). The dense arrays of sub-50 nm diameter vertically oriented nanowires are released from the InP growth substrate by selective etching, and are assembled into lateral device arrays on a Si substrate by electric-field assisted assembly. The source and drain metal contacts are deposited on the p + and n + segments of the wires, and the current-voltage (I-V) properties are measured under different ambient conditions. The etched junctions exhibit clear rectifying p...

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Section: Methodsmentioning

confidence: 99%

Deterministic Assembly of In_0.53Ga_0.47As p⁺-i-n⁺ Nanowire Junctions for Tunnel Transistors

Kuo

Liu

et al. 2012

ECS Trans.

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“…집적 광학의 원리를 기반으로 마이크로 공진 소자는 optical switching, interconnection, bio-sensing [1][2][3][4][5][6][7][8][9] 등에서의 광대한 응 용가능성 때문에, 링 [1][2][3][4][5][6][7] , 디스크 [8] , 구형 [9,10] 등의 다양한 구 조로 연구되고 있다. 여러 광학 공진기 중에서 링 공진기는 높은 Q값과 좁은 선폭의 발진 특성으로 잘 알려져 있다.…”

Section: 서 론unclassified

Optical Characteristics of Unidirectional Single-mode Lasing Square Ring Cavities

Lee¹,

Lee²,

Kim³

et al. 2016

Korean Journal of Optics and Photonics

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We report on the parameter-dependent optical characteristics of the unidirectional single-mode lasing square ring cavities. Using the taper-step section in the square cavities, the resonant direction can be selected and we characterize the optical losses by changing the taper lengths. Various kinds of square ring cavities are fabricated, based on InGaAsP/InGaAs multiple quantum well semiconductor materials. From the experimental results we obtain the optimized taper length for a given device structure, while maintaining unidirectional single-mode lasing.

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“…[1][2][3][4][5][6][7][8][9] Various types of cavity structures, such as ring, [1][2][3][4][5][6][7] disk, 8 and sphere, 9,10 are researched to satisfy the specific purposes. Among these photonic cavities, typical ring resonators are well known for having high Q-factors and a narrow line width of lasing emission.…”

Section: Introductionmentioning

confidence: 99%

Selection of lasing direction in single mode semiconductor square ring cavities

Lee

Kim

Moon

et al. 2016

Journal of Applied Physics

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We propose and demonstrate a selection scheme of lasing direction by imposing a loss imbalance structure into the single mode square ring cavity. The control of the traveling direction is realized by introducing a taper-step section in one of the straight waveguides of the square ring cavity. It was shown by semi-analytic calculation that the taper-step section in the cavity provides effective loss imbalance between two travelling directions as the round trip repeats. Various kinds of square cavities were fabricated using InGaAsP/InGaAs multiple quantum well semiconductor materials in order to test the direction selectivity while maintaining the single mode. We also measured the pump power dependent lasing spectra to investigate the maintenance property of the lasing direction. The experimental results demonstrated that the proposed scheme is an efficient means for a unidirectional lasing in a single mode laser.

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InP/InGaAsP Flattened Ring Lasers With Low-Loss Etched Beam Splitters

Cited by 9 publications

References 15 publications

Deterministic Assembly of In_0.53Ga_0.47As p⁺-i-n⁺ Nanowire Junctions for Tunnel Transistors

Deterministic Assembly of In_0.53Ga_0.47As p⁺-i-n⁺ Nanowire Junctions for Tunnel Transistors

Optical Characteristics of Unidirectional Single-mode Lasing Square Ring Cavities

Selection of lasing direction in single mode semiconductor square ring cavities

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InP/InGaAsP Flattened Ring Lasers With Low-Loss Etched Beam Splitters

Cited by 9 publications

References 15 publications

Deterministic Assembly of In0.53Ga0.47As p+-i-n+ Nanowire Junctions for Tunnel Transistors

Deterministic Assembly of In0.53Ga0.47As p+-i-n+ Nanowire Junctions for Tunnel Transistors

Optical Characteristics of Unidirectional Single-mode Lasing Square Ring Cavities

Selection of lasing direction in single mode semiconductor square ring cavities

Contact Info

Product

Resources

About

Deterministic Assembly of In_0.53Ga_0.47As p⁺-i-n⁺ Nanowire Junctions for Tunnel Transistors

Deterministic Assembly of In_0.53Ga_0.47As p⁺-i-n⁺ Nanowire Junctions for Tunnel Transistors