InP MMICs for V-band FMCW radar

Sasaki, Koichi; Utsu, J.; Matsugatani, Kazuoki; Hoshino, K.; Taguchi, Takashi; Ueno, Yoshiki

doi:10.1109/mwsym.1997.602954

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…The device has an of 135 GHz and an of 200 GHz. We opted for a gate injection topology because it has shown the best conversion gain for low LO power levels [3]- [8]. Because of the phase modulation scheme used by the system, the modest linearity of this kind of mixers does not represent an problem.…”

Section: Circuit Designmentioning

confidence: 99%

A V-band up-converting InP HEMT active mixer with low LO-power requirements

Orzati

Robin

Meier

et al. 2003

IEEE Microw. Wireless Compon. Lett.

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In this letter, we present a monolithically integrated up-converting active mixer that shifts a signal in the 16 GHz range up to the V-band using a 48 GHz local oscillator (LO) signal. The circuit was realized with the 0.2 m InP HEMT in-house process of the Swiss Federal Institute of Technology in Zurich using coplanar-waveguide technology. Measurements of the fabricated circuit show a peak conversion gain of 1 dB at 64.5 GHz for 1.7 dBm LO power, LO suppression better than 30 dB and input third-order intercept point of 1.6 dBm. This mixer will be employed in the signal up-conversion path of a 60 GHz transceiver for indoor wireless LANs.

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Section: Circuit Designmentioning

confidence: 99%

A V-band up-converting InP HEMT active mixer with low LO-power requirements

Orzati

Robin

Meier

et al. 2003

IEEE Microw. Wireless Compon. Lett.

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“…Other MMIC based vehicular radar work is carried out by Millitech (USA), HIT (Israel), Thomson (France), and Fujitsu (Japan). Over and above that world-wide many foundries are developing MIMIC chip-sets for automotive radar, among them ums (Ulm, Germany and Paris, France), Siemens (Munich, Gernany), the LAF (Freiburg, Gennany), NEC, and Denso (Japan) [13][14][15][16][17][18]. But, for an efficient introduction of MMIC technology further advancements in high yield semiconductor processing as well as improvements in efficiency and sensitivity are required.…”

Section: Monolithic Integrationmentioning

confidence: 99%

Future Trends in Automotive Radar / Imaging Radar

Wenger

1998

28th European Microwave Conference, 1998

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There is a growing interest ofcar manufacturers in sensors monitoring the car's surrounding area in order to improve safety systems from mere crash survival to crash prediction or prevention by early detection of hazardous -situations. Therefore radar sensors have been intensively investigated for many years. A large variety of radar based vehicular sensors have been developed. Narrow-beam radars are tested for intelligent cruise control (ICC), collision or obstacle warning, other sensors are used for stop&go operation, as lane change aid, for side or rear impact warning. Though first radar sensors for ICC operation are moving into the pre-production phase, further improvement in low-cost high-volume manufacturing is essentiaL Next generations of automotive radar sensors will take advantage of increased signal processing power, progress in semiconductor technology, and improved packaging and assembly techniques. Future radar sensors will comprise electronically scanned beams allowingfor better resolution with a high image update rate. Fusion ofradar with other on board sensors (e.g. video) willfurther improve the performance ofcar safety systems, leading to intelligent vehicles infuture.

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“…In the high frequency range, i.e. millimeter and submillimeter-wave, systems are fabricated using an MMIC technology (Sasaki et al (2)), quasi-optical techniques (Steup et al (3)) or even hybrid (MIC or :MHMIC) technology for lower frequencies (Ka band).…”

Section: Introductionmentioning

confidence: 99%

Ka Band Test Fixture with DC Bias Circuit for Active Device Characterization

Goff

Bourreau

Peden

1998

28th European Microwave Conference, 1998

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This paper presents the S parameter measurements of PHEMT chip transistors in the Ka band. The transistor is mounted on an alumina substrate on which the DC bias circuit is included using a multilayer technology. This is an interesting solution because the bias circuit is used to improve the stability of the active device especially in the low frequency range by implementing SMC resistors and capacitors.

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InP MMICs for V-band FMCW radar

Cited by 7 publications

References 4 publications

A V-band up-converting InP HEMT active mixer with low LO-power requirements

A V-band up-converting InP HEMT active mixer with low LO-power requirements

Future Trends in Automotive Radar / Imaging Radar

Ka Band Test Fixture with DC Bias Circuit for Active Device Characterization

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