InP nanowire p-type doping via Zinc indiffusion

Abstract

InP nanowire p-type doping via Zinc indiffusionHaggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars Growth, 451, 18-26. DOI: 10.1016/j.jcrysgro.2016 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. AbstractWe report an alternative pathway for p-type InP nanowire (NW) doping by indiffusion of Zn species from the gas phase. The indiffusion of Zn was performed in a MOVPE reactor at 350 -500 °C for 5 -20 min with either H 2 environment or additional phosphorus in the atmosphere. In addition, Zn 3 P 2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate interstitial Zn. The InP NWs were characterized with photoluminescence and electrical measurements. The acquired carrier concentrations were in order of >10 17 cm -3 for NWs without post-annealing, and up to 10 18 cm -3 for NWs annealed with the Zn 3 P 2 shells. The indiffused Zn was evident additionally in the photoluminescence measurements.

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

“…The observed PL peak of ∼155 meV is slightly red-shifted by ∼15 meV from the ZB InSb band gap value. On the other hand, red-shifting of PL signal in nanowires is a common phenomenon with various origins: (i) band bending related to surface states or interfaces; (ii) crystal structure variation, type II transitions, and defects; , and (iii) dopants and impurities. , Here, red-shifting due to surface and interface states is considered the most plausible explanation since the InSb network on the PI surface is of polycrystalline nature and is expected to contain grain boundaries, and additionally, the InSb NW structure has a high surface-to-volume ratio. Similarly, impurities may be present in the NWs in quantities below the EDX detection limit and induce red-shifting of the PL peak position.…”

Exploring the Internal Radiative Efficiency of Selective Area Nanowires

“…Zn is known to be more difficult to incorporate if the growth temperature is raised over ≈700°C [39,40]; recent results published in literature also support this conclusion [41,42]. This inference is further confirmed by measurements performed with APT of nanowires identical to those presented here: at the highest Zn molar fraction (7 4 × 10 −6 ), the Zn concentration is <10 17 cm −3 , which is difficult to discern from the ppm noise level of the instrument (1 ppm is 4 × 10 16 cm −3 in InP).…”

Nanowire Electronics: From Nanoscale to Macroscale

“…In addition to the above methods, other traditional characterization techniques may be utilized for assessing the doping level of nanowires. For instance, optical methods, including photoluminescence, , photoconductivity, , and Raman spectroscopy, , have been used for dopant determination. Scanning probe methods, such as scanning tunneling microscopy, , Kelvin probe force microscopy, , and scanning photocurrent microscopy, − can be used for quantitatively determining the doping profile at the surface of nanowires with a high spatial resolution.…”