InP power HEMTs with 36% PAE at 60 GHz

Grundbacher, R.; Nishimoto, M.; Chin, T. P.; Chen, Y.C.; Lai, R.; Yamauchi, Daisuke; Schreyer, G.; Block, T.; Медведев, В. В.; Streit, D.C.

doi:10.1109/iciprm.1999.773696

Cited by 2 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At W-band, InP HEMT's have proven to be superior to GaAs HEMT's in terms of PAE at the same power level [1], [2]. However, until recently [3], GaAs HEMT's and InP HEMT's have demonstrated comparable PAE at similar power levels at V-band [4]- [8].…”

Section: Introductionmentioning

confidence: 93%

Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band

Grundbacher

Lai

Nishimoto

et al. 1999

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

We report state-of-the-art V-band power performance of 0.15-m gate length InGaAs/InAlAs/InP HEMT's which have 15 m 2 25 m dry-etched through-substrate source vias (substrate thickness 50 m). The 500-m wide InP HEMT's were measured in fixture at 60 GHz and demonstrated an output power of 190 mW with 40% power-added efficiency (PAE) and 6.8 dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device. The results are achieved through optimization of the InP-based heterostructure which incorporates a graded pseudomorphic InGaAs channel and a graded pseudomorphic InAlAs Schottky barrier layer, and the use of 15 m 2 25 m dry-etched through-substrate source vias.

show abstract