INR negative resist: a negative-tone I-line chemically amplified photoresist

Linehan, Leo L.; Spinillo, Gary T.; Smith, Randolph S.; Moreau, Wayne M.; McCormick, Barry C.; Wood, Robert L.; Puttlitz, Erik A.; Collins, James P.; Miller, William J.

doi:10.1117/12.175347

Cited by 4 publications

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“…However, due to the swelling of negative resist during development, they have been limited to applications with resolution requirement of 2 to 3um.1 In the constant pursuit of better and cheaper photoresist in the modem microelectronics industry, there has been a great interest in developing a new generation of negative resists capable of submicron resolution along with all the advantages of traditional negative resists. 2,3,4,5 In this article, we report the applications of a new high resolution negative tone resist in etching and liftoff processes. The resist used, the Futurrex NR8 series, is designed for I-line photolithography.…”

Section: Introductionmentioning

confidence: 99%

Submicron contact lithography for etching and lift-off applications using an i-line negative-tone photoresist with controllable slope

Huang

Lea²,

Lichtenberger

1997

Advances in Resist Technology and Processing XIV

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We have used an i-line negative tone photoresist to define submicron masking features with contact lithography for applications in plasma etching, wet chemical processing, and liftoff. The resist used for our study is the Futurrex NR8 series. It is based on a polyhydroxystyrene resin structure rather than the polyisoprene matrix resin found in most conventional negative resists, and it uses an aqueous alkaline solution instead of an organic solvent for development. We have found this resist to be very thermally stable at relatively high temperatures, and is compatible with various plasma and wet chemical processes. Moreover, through proper selection of lithography parameters, the resist profile can be tailored to accurately obtain positive, vertical or negatively sloped sidewalls for specific applications. We have established liftoff processes of numerous kinds of evaporated and sputtered metals and oxides using the unique profile-controlling property of this resist. We present SEM images and data from a study of the effects of lithography parameters on resist profiles. Also included is the fabrication sequence of a submicron single layer selfaligned liftoff process using the NR8 resist. These results suggest potential applications in a wide variety of processes.

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Section: Introductionmentioning

confidence: 99%

Submicron contact lithography for etching and lift-off applications using an i-line negative-tone photoresist with controllable slope

Huang

Lea²,

Lichtenberger

1997

Advances in Resist Technology and Processing XIV

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Photolithography

Leuschner

Pawlowski²

2013

Materials Science and Technology

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The sections in this article are Introduction Exposure Tools Image Formation and Resolution Contact and Proximity Printing Optical Mask Aligner X‐Ray Stepper Projection Printing Near UV Projection Systems Deep UV Projection Systems Nonconventional UV Lithography Post‐Optical Lithography Photoresist Processing Quality Control and Resist Deposition Purity and Storage Stability Resist Coating Resist Exposure and Development Characteristic Curve and Standing Wave Effects Process Latitudes Dissolution Rate and Development Methods Pattern Inspection and Resist Profile Simulation Etching, Resist Stripping and Planarization Photoresists Principles of Photoresist Chemistry Negative‐Tone Resists Photocrossslinking Via Azides Free‐Radical‐Initiated Polymerization Acid‐Catalyzed Crosslinking Positive‐Tone Resists Dissolution Inhibition/Dissolution Promotion Acid‐Catalyzed Deblocking Polymer Degradation Solvents for Photoresists and Main Resist Suppliers Special Photoresist Techniques Nonconventional Diazo Resist Processes Resist Profile Modification and Image Reversal Bilayer Systems for Contrast Enhancement Suppression of Reflections and Standing Wave Effects Dyed Resists Antireflective Layers Silicon‐Containing Multilayer Resists Negative‐Tone Silicon Bilayer Resists Positive‐Tone Silicon Bilayer Resists Top Surface Imaging Gas Phase Silylation Systems Liquid Phase Silylation Systems Trends in Photolithography

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Photolithography

Leuschner

Pawlowski²

2000

Handbook of Semiconductor Technology Set

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INR negative resist: a negative-tone I-line chemically amplified photoresist

Cited by 4 publications

References 0 publications

Submicron contact lithography for etching and lift-off applications using an i-line negative-tone photoresist with controllable slope

Submicron contact lithography for etching and lift-off applications using an i-line negative-tone photoresist with controllable slope

Photolithography

Photolithography

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