Microbridge formation in a CAlViN photoresist we have developed is dependent on the ratio of dose to print ( DiP ) to dose to gel ( DTG ) as well as resist contrast. Photoresists formulated with poly(p-hydroxystyrene) (PHS) have a very high tendency to form microbridges when developed in 2.38 wt% TMAH due to high contrast and high a DTP/DTG ratio. When photoresists formulated from PHS were developed in 1 .2 wt% TMAH contrast and DTP/DTG ratio were reduced resulting in microbridging being nearly eliminated. Using this observation we developed an I-line CAMN photoresist with PHS type thermal stability and high resolution capabilities which can be developed in industry standard 2.38 wt% TMAH.

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