InSb
                ∕
                AlInSb
           quantum-well light-emitting diodes

Nash, George; Haigh, M. K.; Hardaway, H. R.; Buckle, L.; Andreev, A. D.; Gordon, Neil T.; Smith, Stuart; Emeny, M. T.; Ashley, T.

doi:10.1063/1.2171647

Cited by 26 publications

(15 citation statements)

References 9 publications

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“…3) or AlInSb. 4 LEDs with active regions containing InAsSb/InAs quantum wells, 5 InSb quantum dots, 6 and InAs/GaSb superlattices 7 have also been investigated.…”

mentioning

confidence: 99%

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cheetham¹,

Krier²,

Marko³

et al. 2011

Applied Physics Letters

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Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes Appl. Phys. Lett. 99, 143101 (2011) Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate J. Appl. Phys. 110, 073102 (2011) Effect of organic bulk heterojunction as charge generation layer on the performance of tandem organic light-emitting diodes J. Appl. Phys. 110, 074504 (2011) Self-heating and athermal effects on the electroluminescence spectral modulation of an AlGaInP light-emitting diode J. Appl. Phys. 110, 073103 (2011) Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer Appl. Phys. Lett. 99, 131111 (2011) Additional information on Appl. Phys. Lett.

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“…3) or AlInSb. 4 LEDs with active regions containing InAsSb/InAs quantum wells, 5 InSb quantum dots, 6 and InAs/GaSb superlattices 7 have also been investigated.…”

mentioning

confidence: 99%

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Cheetham¹,

Krier²,

Marko³

et al. 2011

Applied Physics Letters

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“…Meanwhile, several uncooled InSb LEDs have been reported [7,8]. These LEDs used as an InSb substrate or relaxed metamorphic buffer layer to accommodate the large lattice mismatch between GaAs (0 0 1) substrates and InSb epi-layers.…”

Section: Introductionmentioning

confidence: 99%

Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layer

Ueno

Camargo

Morishita

et al. 2011

Journal of Crystal Growth

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“…12 A greater understanding of the optical properties of single InSb QWs is therefore required before their unique characteristics, such as the high electron g factor can be fully exploited, and in this paper we analyze the low-temperature emission spectra of conventional vertical LEDs containing active regions consisting of InSb quantum wells of varying thicknesses. 13 Electroluminescence studies provide an exciting experimental platform that offers additional degrees of freedom, such as the ability to vary the net bias across the quantum wells that complement photoluminescence techniques. The measured emission spectra, which are compared to simulations carried out using an eight-band k .…”

Section: Introductionmentioning

confidence: 99%

Energy level spectroscopy of InSb quantum wells using quantum-well LED emission

et al. 2009

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We have investigated the low-temperature optical properties of InSb quantum-well ͑QW͒ light-emitting diodes, with different barrier compositions, as a function of well width. Three devices were studied: QW1 had a 20 nm undoped InSb quantum well with a barrier composition of Al 0.143 In 0.857 Sb, QW2 had a 40 nm undoped InSb well with a barrier composition of Al 0.077 In 0.923 Sb, and QW3 had a 100 nm undoped InSb well with a barrier composition of Al 0.025 In 0.975 Sb. For QW1, the signature of two transitions ͑CB1-HH1 and CB1-HH2͒ can be seen in the measured spectrum, whereas for QW2 and QW3 the signature of a large number of transitions is present in the measured spectra. In particular transitions to HH2 can be seen, the first time this has been observed in AlInSb/InSb heterostructures. To identify the transitions that contribute to the measured spectra, the spectra have been simulated using an eight-band k . p calculation of the band structure together with a first-order time-dependent perturbation method ͑Fermi golden rule͒ calculation of spectral emittance, taking into account broadening. In general there is good agreement between the measured and simulated spectra. For QW2 we attribute the main peak in the experimental spectrum to the CB2-HH1 transition, which has the highest overall contribution to the emission spectrum of QW2 compared with all the other interband transitions. This transition normally falls into the category of "forbidden transitions," and in order to understand this behavior we have investigated the momentum matrix elements, which determine the selection rules of the problem.

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InSb ∕ AlInSb quantum-well light-emitting diodes

Cited by 26 publications

References 9 publications

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layer

Energy level spectroscopy of InSb quantum wells using quantum-well LED emission

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