The properties of Al x In 1−x Sb light-emitting diodes ͑LEDs͒ have been investigated as a function of aluminum concentrations between 0% and 8.8%. By varying the aluminum concentration it is possible to tailor the peak emission wavelength to match the characteristic absorption of CO 2 , CO, CH 4 , NO, and NO 2 , making these diodes suitable for use in infrared gas sensing applications. The total emitted power and internal quantum efficiency were found to have maxima of 27 mW/ cm 2 and 4.2%, respectively, at a composition of 2.5%, where the peak emission was found to be 5.3 m, making LEDs of this composition particularly suited to the detection of NO.

We have investigated the room-temperature electroluminescent properties of InSb/ Al x In 1−x Sb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.

The properties of InSb∕AlxIn1−xSb quantum-well light-emitting diodes have been investigated as a function of temperature from 300to15K. Over the whole range, the peak emission occurred at significantly higher energies than the band gap of InSb but below the band gap of the AlxIn1−xSb barriers, confirming that emission is from the quantum wells. Maximum internal quantum efficiencies of 65% and 85% were measured at 15K for diodes containing 40 and 20nm quantum wells, respectively.

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We have investigated the negative luminescent properties of a device fabricated from metalorganic vapor phase epitaxy grown HgCdTe on a Si substrate. The peak emission was at 7.2μm, and the intrinsic Auger processes were found to be very well suppressed. The low currents (minimum current density, Jmin, of 0.84A∕cm2 at 295K) needed to drive these devices makes them suitable for a range of device applications.