Long-wavelength HgCdTe on silicon negative luminescent devices

Haigh, M. K.; Nash, George; Gordon, Neil T.; Edwards, James W.; Graham, Andrew; Giess, J.; Hails, Janet E.; Houlton, M. R.

doi:10.1063/1.1843280

Cited by 11 publications

(5 citation statements)

References 17 publications

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“…[4][5][6][7][8] Internal efficiencies in excess of 90% at room temperature, corresponding to suppression of the black-body emission by more than an order of magnitude, have been reported for large-area (5 mm · 5 mm) devices grown on CdZnTe substrates and operating in the 3-5 lm spectral region. 8 In saturation, those devices exhibited uniform emission and reverse-bias saturation current densities as low as 0.11 A cm -2 (k co = 4.8 lm).…”

Section: Introductionmentioning

confidence: 98%

MCT-on-Silicon Negative Luminescence Devices with High Efficiency

Lindle

Bewley

Vurgaftman

et al. 2007

Journal of Elec Materi

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We used an InSb radiometric thermal imager to characterize the performance of 1¢¢ · 1¢¢ negative luminescent (NL) arrays. The devices grown on both CdZnTe (two arrays) and silicon (three arrays) as substrates have cut-off wavelengths ranging from 5.3 lm to 6.0 lm. The reverse-bias saturation current densities range from 0.3 A cm -2 (k co = 5.3 lm) to 1 A cm -2 (k co = 6.0 lm). The apparent array temperatures decrease by 37.9 K to 42.8 K under reverse bias, which corresponds to external NL efficiencies of 80-85%. Most of the inefficiency results from the non-ideal AR coating, whose reflectivity is %15% when weighted over the black body and atmospheric transmission spectra. It is highly encouraging that both the electrical and NL properties are slightly superior for the devices grown on silicon substrates.

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Section: Introductionmentioning

confidence: 98%

MCT-on-Silicon Negative Luminescence Devices with High Efficiency

Lindle

Bewley

Vurgaftman

et al. 2007

Journal of Elec Materi

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“…Since then, NL has been observed in a number of IR detector and LED material systems with cutoff wavelengths (l co ) beyond 4 mm, including InSb, 3,6 InSb/ InAlSb heterostructures, 7,8 InAs,9 In(Ga)As(Sb)/ InAsSb(P) heterostructures, 10-18 type-II InAs/GaSb superlattices, 19 and HgCdTe. 4,5,8,[20][21][22][23][24][25][26][27][28][29][30] The best NL device performance to date has been obtained using relatively mature HgCdTe photodiode materials.…”

Section: Introductionmentioning

confidence: 99%

HgCdTe negative luminescence devices for cold shielding and other applications

Lindle

Bewley

Vurgaftman

et al. 2006

Journal of Elec Materi

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Negative luminescence (NL) refers to the suppression of infrared blackbody emission, and hence an apparent temperature reduction, due to free carrier extraction from a reverse-biased p-n junction. A number of applications are envisioned for NL devices, including cold shielding of background-limited uncooled and cryogenic focal-plane arrays, dynamic nonuniformity correction for ir imaging, and ir scene simulation. High-performance NL devices have recently been demonstrated. For example, a HgCdTe/CdZnTe photodiode with 4.8-mm cutoff wavelength achieved an internal NL efficiency of 95% at room temperature. This means that the blackbody emission was suppressed by a factor of 20 and that the apparent temperature of the device surface decreased by 60 K. The corresponding reverse-bias saturation current density was 0.11 A/cm 2 . Even HgCdTe devices (l co 5 5.3 mm) grown on large-area silicon substrates with substantial lattice mismatch displayed 88% internal NL efficiency and saturation current densities no larger than 1.3 A/cm 2 . These results indicate a clear path toward a negative-luminescence device technology that is efficient, operates at low power, and is inexpensive. INTRODUCTIONThe military sensing community is eagerly anticipating the development of uncooled or minimally cooled thermal or photon infrared (IR) detectors that achieve background-limited performance (BLIP). An uncooled near-BLIP technology would strongly impact a broad spectrum of sensing systems, due to its obvious advantages in terms of size, weight, power, cost, and reliability. While thermal detectors for the long-wavelength ir (LWIR) already operate uncooled, at present their sensitivities tend to be far from BLIP, and fast frame rates can be achieved only by trading further against the sensitivity. Those devices tend to be limited by such factors as the heat capacity and thermal isolation of the absorbing layers. By contrast, the current generation of midwave ir (MWIR) and LWIR photon detectors exhibit BLIP sensitivity, but only at cryogenic temperatures. While the dark currents associated with Auger and radiative recombination processes can be addressed by special nonequilibrium high-operating-temperature 1 and related 2 geometries, 1/f noise and Shockley-Read defects then dominate. These are not fundamental limitations, however, and we expect thermoelectrically cooled, near-BLIP, ir focal-plane arrays (FPAs) to become available within a few years.An important component of the current photon detector technology is the cold shield (CS), which encases the FPA and blocks solid angles falling outside the desired field of view. This is usually an evacuated metal Stirling-cycle refrigerator with a cold inner surface. Today's thermal detectors do not employ cold shielding, since other noise sources are still more important than radiation from outside the scene. However, once near-BLIP operation is feasible for an uncooled FPA (either photon or thermal), the incorporation of a CS becomes essential. Yet, conventional cold shielding is unattractive ...

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“…Other groups have also documented the numerous potential applications of NL devices [4], which include dynamic cold shields for focal plane arrays, infrared scene projection systems, and active reference planes for thermal detectors. Over the past few years, researchers have demonstrated negative luminescence effects in various infrared material systems including InGaAsSb [5], type-II InAs/InAsSb [6], InAs/GaSb [7], HgCdTe [8][9] [10], and InSb/InAlSb [11].…”

Section: Introductionmentioning

confidence: 99%

Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes

Hoffman¹,

Razeghi²

2006

SPIE Proceedings

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Recently, several groups have investigated the aspects of positive and negative luminescence behavior in infrared materials. Under forward bias voltage, charge carriers are injected into the active region of a p-n junction, giving rise to positive luminescence. In contrast, a p-n junction under reverse bias conditions can exhibit negative luminescence caused by a reduction of the electron-hole recombination of the device, such that the photon flux is below that of the black body emission in equilibrium.In the present work, we show measurements of both positive and negative luminescence of binary Type II InAs/GaSb superlattice photodiodes in the 3 to 13 µm spectral range. Through a radiometric calibration technique, we demonstrate temperature independent negative luminescence efficiencies of 45 % in the midwavelength (MWIR) sample from 220 K to 320 K without anti-reflective coating and values reaching 35 % in the long wavelength infrared (LWIR) spectrum sample. With the radiative recombination constant obtained in the framework of k ⋅ p theory a model is obtained to describe the temperature dependent behavior of the results near thermal equilibrium in both samples. In the long wavelength regime, we demonstrate that the dominant non-radiative recombination channel in n-type material is Auger recombination with an electron-hole-electron (CHCC) Auger recombination coefficient of C n = 1 x 10 24 cm 6 s -1 . While in the mid wavelength infrared window, the primary non-radiative recombination is ShockleyRead-Hall recombination giving rise to a p-type residual background capture cross-section of σ n = 7 x 10 -16 cm 2 .

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Long-wavelength HgCdTe on silicon negative luminescent devices

Cited by 11 publications

References 17 publications

MCT-on-Silicon Negative Luminescence Devices with High Efficiency

MCT-on-Silicon Negative Luminescence Devices with High Efficiency

HgCdTe negative luminescence devices for cold shielding and other applications

Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes

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