InSb cryogenic radiation detectors

Kanno, Ikuo; Hishiki, Shigeomi; Sugiura, Osamu; Xiang, Ruifei; Nakamura, Tatsuya; Katagiri, Masaki

doi:10.1016/j.nima.2006.06.009

Cited by 15 publications

(9 citation statements)

References 4 publications

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“…Moreover, some studies have shown that the s orbital of the lone‐pair electrons can cause a strong s‐p antibonding characteristic at the top of the VB, resulting in an increase of the VB dispersion and a decrease of the effective mass of electrons and holes, [ 8 ] which facilitates the migration of charge carriers. Several valuable X‐ray detection materials all contain different kinds of lone‐pair electron cations, including InSb, [ 9 ] PbI 2 , [ 10 ] BiI 3 , [ 11 ] CZT [ 5a ] and metal halide perovskites CsPbBr 3 [ 12 ] and CH 3 NH 3 SnI 3 . [ 13 ]…”

Section: Introductionmentioning

confidence: 99%

Lone‐pair Electrons Enhancement Effect: SnTe₃O₈ Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

Guo

Gao

et al. 2023

Adv Funct Materials

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Sensitivity and detection limit of X‐ray detectors are crucial for security checks, medical diagnoses, and industrial inspections. In this study, it is reported that introducing some cations containing lone‐pair electrons is beneficial for enhancing the Compton scattering effect and thus improving X‐ray detection performance. As an example, SnTe3O8 is selected and grown as a novel high‐temperature X‐ray detection crystal. Because of the high resistivity of 2 × 1014 Ω cm and high mobility lifetime product of 3.22 × 10−4 cm2 V−1, SnTe3O8 X‐ray detector exhibits a high sensitivity of 436 µC Gyair−1 cm−2 under 120 keV hard X‐ray, a low dark current drift of 2.44 × 10−9 nA cm−1 s−1 V−1 and a record low detection limit of 8.19 nGyair s−1 among all oxide X‐ray detectors. Furthermore, the high‐temperature sensitivity of SnTe3O8 X‐ray detector is enhanced to 617 µC Gyair−1 cm−2 at 175 °C, which is ≈31 times larger than that of the commercial α‐Se. The high thermal stability and stable high‐temperature sensitivity of SnTe3O8 single crystal X‐ray detectors have potential applications in high‐temperature environments. The results not only provide an excellent high‐temperature X‐ray detection crystal but also propose an effective method to explore X‐ray detector materials with excellent performances.

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Section: Introductionmentioning

confidence: 99%

Lone‐pair Electrons Enhancement Effect: SnTe₃O₈ Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

Guo

Gao

et al. 2023

Adv Funct Materials

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“…InSb Schottky diodes fabricated from epitaxially grown crystals had been studied as radiation detectors [9][10][11]. Cooling the Schottky diode to 42 K, alpha particles (5.5 MeV in energy) were detected with 1.8 % FWHM [11].…”

Section: Introductionmentioning

confidence: 99%

InAs avalanche photodiodes as X-ray detectors

et al. 2015

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We designed and demonstrated an InAs avalanche photodiode (APD) for X-ray detection, combining narrow band gap semiconductor materials and avalanche gain from APDs. The InAs APD (cooled by liquid nitrogen) was tested with a 55 Fe X-ray source. Full width at half maximum (FWHM) from the spectra decreases rapidly with reverse bias, rising again for higher voltages, resulting in a minimum FWHM value of 401eV at 5.9 keV. This minimum value was achieved at 10 V reverse bias, which corresponds to an avalanche gain of 11. The dependence of FWHM on reverse bias observed is explained by the competition between various factors, such as leakage current, capacitance and avalanche gain from the APD, as well as measurement system noise. The minimum FWHM achieved is largely dominated by the measurement system noise and APD leakage current.

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“…These diodes were cooled to very low cryogenic temperature (4.2-5.4 K) to avoid high leakage currents contributing to noise in the detection system. Using InSb wafer grown by liquid phase epitaxy, a FWHM of 2.4 % was achieved for 5.5 MeV alpha particles when the diode was cooled to 5.4 K [3].…”

Section: Introductionmentioning

confidence: 99%

InAs avalanche photodiodes for X-ray detection

Gomes¹,

Tan²,

Ker³

et al. 2011

J. Inst.

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In this work we present the first InAs avalanche photodiode (APD) for X-ray detection and demonstrate the improved energy resolution due to its avalanche gain. Under the radiation from a 55 Fe radioactive X-ray source the full width at half maximum (FWHM) at 5.9 keV peak reduces as the avalanche gain increases. The FWHM drops from 2.02 keV at an avalanche gain of 1.58 to 950 eV at a gain of 5.3. The FWHM was larger than the fano-limited value due to the noise from accompanying electronics and the increased leakage current introduced by the diode packaging.

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InSb cryogenic radiation detectors

Cited by 15 publications

References 4 publications

Lone‐pair Electrons Enhancement Effect: SnTe₃O₈ Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

Lone‐pair Electrons Enhancement Effect: SnTe₃O₈ Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

InAs avalanche photodiodes as X-ray detectors

InAs avalanche photodiodes for X-ray detection

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InSb cryogenic radiation detectors

Cited by 15 publications

References 4 publications

Lone‐pair Electrons Enhancement Effect: SnTe3O8 Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

Lone‐pair Electrons Enhancement Effect: SnTe3O8 Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

InAs avalanche photodiodes as X-ray detectors

InAs avalanche photodiodes for X-ray detection

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Product

Resources

About

Lone‐pair Electrons Enhancement Effect: SnTe₃O₈ Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit

Lone‐pair Electrons Enhancement Effect: SnTe₃O₈ Hard X‐ray Detection with Stable High‐temperature Sensitivity and Ultralow Detection Limit