2015
DOI: 10.1088/1748-0221/10/10/p10030
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InAs avalanche photodiodes as X-ray detectors

Abstract: We designed and demonstrated an InAs avalanche photodiode (APD) for X-ray detection, combining narrow band gap semiconductor materials and avalanche gain from APDs. The InAs APD (cooled by liquid nitrogen) was tested with a 55 Fe X-ray source. Full width at half maximum (FWHM) from the spectra decreases rapidly with reverse bias, rising again for higher voltages, resulting in a minimum FWHM value of 401eV at 5.9 keV. This minimum value was achieved at 10 V reverse bias, which corresponds to an avalanche gain o… Show more

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Cited by 3 publications
(2 citation statements)
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“…A few studies of smallbandgap materials, such as InAs (Z In = 49, Z As = 33) and InSb (Z In = 49, Z Sb = 51), have shown the successful detection of α-particles or soft X-rays at temperatures lower than 80 K, but hard X-ray or gamma-ray energies larger than 10 keV have not yet been detected to the best of our knowledge. [11][12][13][14] GaSb, as one of the popular III-V materials for optoelectronics, [15][16][17][18][19] exhibits a great potential to offer a high spectroscopic performance for a gamma-ray detector. Although lowtemperature operation would be required to minimize leakage noise induced by the small bandgap of GaSb (E g = 0.72 eV at 300 K), the relatively high Z (Z Ga = 31, Z Sb = 51) and low PCE of GaSb predicted using an empirical formula are favorable for high energy resolutions from soft X-ray to gamma-ray energies up to a few hundred keV.…”
mentioning
confidence: 99%
“…A few studies of smallbandgap materials, such as InAs (Z In = 49, Z As = 33) and InSb (Z In = 49, Z Sb = 51), have shown the successful detection of α-particles or soft X-rays at temperatures lower than 80 K, but hard X-ray or gamma-ray energies larger than 10 keV have not yet been detected to the best of our knowledge. [11][12][13][14] GaSb, as one of the popular III-V materials for optoelectronics, [15][16][17][18][19] exhibits a great potential to offer a high spectroscopic performance for a gamma-ray detector. Although lowtemperature operation would be required to minimize leakage noise induced by the small bandgap of GaSb (E g = 0.72 eV at 300 K), the relatively high Z (Z Ga = 31, Z Sb = 51) and low PCE of GaSb predicted using an empirical formula are favorable for high energy resolutions from soft X-ray to gamma-ray energies up to a few hundred keV.…”
mentioning
confidence: 99%
“…It is a compound containing various metal ions with convertible oxidation states, which could tolerate appreciable vacancies in the anionic sublattices. [8] For a single cubic structure, A site cation is always 12-coordinated with oxygen ions while B site cation is 6-coordinated with oxygen ions. Also, the materials properties could change with the cation ordering.…”
Section: Introductionmentioning
confidence: 99%