1988
DOI: 10.1016/0040-6090(88)90320-3
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Insert gas entrapment in films produced by ion-assisted physical vapour deposition processes

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Cited by 9 publications
(7 citation statements)
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“…Captured carbon from reprocessing could supplement the carbon source used in processing, typically in the form of methyltrichlorosilane, CH 3 SiCl 3 (Jiangang et al 2006). Gaseous fission products, such as Xe and Kr, could be injected onto the surface with low energy ion guns or leaked into processing chamber (Grigorov, and Martev 1988). The radioactive C would be incorporated directly into the SiC structure (see Section ), while Xe and Kr would be incorporated interstitially, trapped at processing defects, or trapped in small bubbles that may form during processing.…”
Section: Silicon Carbide For Immobilizationmentioning
confidence: 99%
“…Captured carbon from reprocessing could supplement the carbon source used in processing, typically in the form of methyltrichlorosilane, CH 3 SiCl 3 (Jiangang et al 2006). Gaseous fission products, such as Xe and Kr, could be injected onto the surface with low energy ion guns or leaked into processing chamber (Grigorov, and Martev 1988). The radioactive C would be incorporated directly into the SiC structure (see Section ), while Xe and Kr would be incorporated interstitially, trapped at processing defects, or trapped in small bubbles that may form during processing.…”
Section: Silicon Carbide For Immobilizationmentioning
confidence: 99%
“…Gaseous fission products, such as Xe and Kr, could be injected onto the surface with low energy ion guns or leaked into processing chamber (Grigorov and Martev 1988). One prior study indicated that up to 20 atomic % Ar could be entrained during PVD of Ti-films (Grigorov and Martev 1988). It is anticipated that equivalent amounts for Xe and Kr could be entrained within CVD or PVD SiC.…”
Section: Summary Report For the Development Of Materials For Volatilementioning
confidence: 99%
“…Captured carbon from reprocessing could supplement the carbon source used in processing, typically in the form of methyltrichlorosilane, CH 3 SiCl 3 (Jiangang et al 2006). Gaseous fission products, such as Xe and Kr, could be injected onto the surface with low energy ion guns or leaked into processing chamber (Grigorov and Martev 1988). One prior study indicated that up to 20 atomic % Ar could be entrained during PVD of Ti-films (Grigorov and Martev 1988).…”
Section: Summary Report For the Development Of Materials For Volatilementioning
confidence: 99%
“…Gaseous fission products, such as Xe and Kr, could be injected into the surface with low-energy ion guns or leaked into processing chamber (Grigorov and Martev 1988). One prior study indicated that up to 20 atomic% Ar could be entrained during PVD of Ti-films (Grigorov and Martev 1988). It is anticipated that equivalent amounts for Xe and Kr could be entrained within CVD or PVD SiC.…”
Section: Introductionmentioning
confidence: 99%
“…Captured carbon from reprocessing could supplement the carbon source used in processing, typically in the form of methyltrichlorosilane, CH 3 SiCl 3 (Jiangang et al 2006). Gaseous fission products, such as Xe and Kr, could be injected into the surface with low-energy ion guns or leaked into processing chamber (Grigorov and Martev 1988). One prior study indicated that up to 20 atomic% Ar could be entrained during PVD of Ti-films (Grigorov and Martev 1988).…”
Section: Introductionmentioning
confidence: 99%