Insertion of HfO<sub>2</sub> Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun

doi:10.1109/ted.2019.2961208

Cited by 97 publications

(45 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ferroelectric parameters and thickness values for the simulations have been determined from the remnant polarisation (P r = 17.76 µC/cm 2 ) and coercive electric field (E c = 104 MV/m, corresponding V c = 1.04 V for 10 nm thickness) values for Hf 0.5 Zr 0.5 O 2 in [47]. Corresponding α and β values were obtained using the following expressions…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Kramers' escape problem for white noise driven switching in ferroelectrics

Ramesh¹,

Verma²,

Ajoy³

2021

Preprint

View full text Add to dashboard Cite

A simulation-based study of Kramers' escape problem in the bistable well of a ferroelectric capacitor is presented. This problem deals with the escape of a particle undergoing Brownian motion over an energy barrier. Using this framework under the assumption of homogeneous polarisation switching according to the Landau-Ginzburg-Devonshire (LGD) theory, two prospective device applications based on a ferroelectric capacitor are also outlined, namely true random number generation (TRNG) and stochastic resonance (SR). Our simulation results for the former demonstrate that by adding white noise and an appropriately tuned voltage pulse to the material system, it is possible to facilitate controlled, probabilistic switching between its two stable polarisation states. We predict that this could provide the theoretical framework for practical implementations of TRNGs. In addition, we also develop a theory for stochastic resonance in a ferroelectric using linear response theory. We show, analytically and via numerical simulations that the addition of an optimal amount of noise to a weak periodic signal given as an input to a non-linear system can enhance its detection.

show abstract

Section: Simulation Results and Discussionmentioning

confidence: 99%

Kramers' escape problem for white noise driven switching in ferroelectrics

Ramesh¹,

Verma²,

Ajoy³

2021

Preprint

View full text Add to dashboard Cite

show abstract

“…However, the seed layer appears to enhance the ferroelectric phase stabilization by the virtue of controlled ferroelectric grain growth. The material type, [127,128] thickness, [129] and position [130] of the seed layer are critical for the optimal ferroelectric phase. The effect of different seed layer types such as TiO 2 , ZrO 2 , HfO 2 , and SiO 2 is viewed in terms of the varying thermal expansion coefficients.…”

Section: Effect Of Seed Layer Insertionmentioning

confidence: 99%

Review on the Microstructure of Ferroelectric Hafnium Oxides

Lederer

Lehninger

Ali

et al. 2022

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Ferroelectric hafnium oxide is of major interest for a multitude of applications in microelectronics, ranging from neuromorphic devices to actuators and sensors. While the electrical performance is commonly discussed in depth, the influence of the microstructure is often disregarded. However, in recent years, more research groups shed light into the microstructural background of ferroelectric behavior in hafnium oxide films. To give a more general and complete picture of the different influences on the microstructure and its relevance for the applications, the process and stack influences on the microstructure are reviewed and summarized. While a few mechanisms are not yet understood in depth, a coherent picture on the formation of the microstructure in ferroelectric hafnium oxide layers can be gained.

show abstract

“…Therefore, the endurance of sample D is better at the annealing temperature of 400 °C. Furthermore, examination of the endurance and RTA temperatures of the BE with As-imp samples and other HfO 2based capacitors, [12,16,22,24,[35][36][37][38][39][40][41][42][43][44][45][46][47][48][49] revealed as shown in Figure 3c, that compared with previous reports, our BE with As-imp samples has almost the highest endurance at the RTA temperatures of 350 °C and 400 °C, demonstrating that the BE with As-imp can effectively improve the endurance in low thermal budget. In addition to improved endurance, the retention and imprint of capacitors with As-imp at the BE were improved compared with the capacitors without As-imp at the BE, as shown in Figures S4 and S5 of the Supporting Information.…”

Section: Endurance Improvementmentioning

confidence: 99%

“…[19][20][21] Several methods have been proposed to improve these properties, including NH 3 plasma treatment on interfaces, La doping in HZO materials, and the use of oxide electrodes or oxide coatings. [12,[22][23][24][25][26] However, these methods may cause side effects, such as wake-up phenomena and limited endurance improvement. Besides, these methods still require a higher annealing temperature to crystallize the HZO film, which conflicts with the integration requirements of HZO materials in M3D-ICs.…”

Section: Introductionmentioning

confidence: 99%

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Tian

Yin

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

HfO2‐based ferroelectric memory is one of the most attractive candidates for embedded memory in future monolithic‐M3D integrated‐circuit (IC). However, ferroelectricity and endurance will degrade at lower annealing temperatures due to the limitation of the M3D‐IC in thermal budget, which significantly inhibits its potential for many applications. In this work, a novel process technology using As5+ implantation (As‐imp) at the bottom electrode (BE) in TiN/Hf0.5Zr0.5O2(HZO)/TiN capacitors is proposed. The HZO film shows excellent ferroelectricity and improves endurance at the annealing temperatures of 350 and 400 °C, especially when the dose of As‐imp is 1 × 1016, where the endurance of the HZO film is up to 1.5 × 1011, and the remnant polarization (Pr) far exceeds the reference capacitor without BE As‐imp, where 2Pr is greater than 40 °C cm−2 after 1.5 × 1011 cycles. The underlying physical mechanism is that the oxidation reaction of introduced As5+ during the film deposition releases extra oxygen atoms to fill the oxygen vacancies (Vo) near the BE interface due to the occurrence of the thermal reduction reaction in the subsequent annealing process. This study paves the way for the integration of HZO‐based ferroelectric embedded memory in future high‐performance and energy‐efficient 3D‐ICs.

show abstract

Insertion of HfO₂ Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Cited by 97 publications

References 23 publications

Kramers' escape problem for white noise driven switching in ferroelectrics

Kramers' escape problem for white noise driven switching in ferroelectrics

Review on the Microstructure of Ferroelectric Hafnium Oxides

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Contact Info

Product

Resources

About

Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Cited by 97 publications

References 23 publications

Kramers' escape problem for white noise driven switching in ferroelectrics

Kramers' escape problem for white noise driven switching in ferroelectrics

Review on the Microstructure of Ferroelectric Hafnium Oxides

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Contact Info

Product

Resources

About

Insertion of HfO₂ Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology