Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo 2 C heterostructures over liquid catalyst

Chaitoglou, Stefanos; Tsipas, Polychronis; Speliotis, Thanassis; Κορδάς, Γ.; Vavouliotis, A.

doi:10.1016/j.jcrysgro.2018.05.015

Cited by 47 publications

(42 citation statements)

References 36 publications

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“…With respect to this, studies 13,20 agree that Mo 2 C crystals get thinner with increasing thickness of Cu layer. Secondly, CH 4 flow rate is also very critical not only because it is the carbon source in Mo 2 C, but also the excess amount results in the formation of graphene, which may act as an additional diffusion barrier in the supply of Mo atoms 17 . Although various groups have mentioned simultaneous growth of graphene and Mo 2 C, there are conflicts in the positional relationship between graphene and Mo 2 C as well as their formation mechanism 14‐17,24 .…”

Section: Introductionmentioning

confidence: 99%

“…CVD has been a promising technique to achieve large area and high quality thin layers of Mo 2 C 3,13,22,[14][15][16][17][18][19][20][21] . In this method, Cu foil is placed on a Mo substrate and heated.…”

Section: Introductionmentioning

confidence: 99%

“…Secondly, CH 4 flow rate is also very critical not only because it is the carbon source in Mo 2 C, but also the excess amount results in the formation of graphene, which may act as an additional diffusion barrier in the supply of Mo atoms. 17 Although various groups have mentioned simultaneous growth of graphene and Mo 2 C, there are conflicts in the positional relationship between graphene and Mo 2 C as well as their formation mechanism. [14][15][16][17]24 For example, while Geng et al claims the evolution of graphene beneath 2D Mo 2 C, 14 with similar growth conditions, Deng et al suggests the formation of graphene on top of Mo 2 C crystals.…”

mentioning

confidence: 99%

“…17 Although various groups have mentioned simultaneous growth of graphene and Mo 2 C, there are conflicts in the positional relationship between graphene and Mo 2 C as well as their formation mechanism. [14][15][16][17]24 For example, while Geng et al claims the evolution of graphene beneath 2D Mo 2 C, 14 with similar growth conditions, Deng et al suggests the formation of graphene on top of Mo 2 C crystals. 15 In short, the effects of reaction temperature, duration, copper thickness, and CH 4 flow rate on the final morphology and thickness of Mo 2 C crystals were studied to some extent, but there are discrepancies and conflicting data in literature.…”

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confidence: 99%

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CVD synthesis and characterization of thin Mo₂C crystals

et al. 2020

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In this study, we present an investigation on the growth of thin Mo2C crystals via chemical vapor deposition using CH4. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy(AFM), and Raman spectroscopy studies show that the morphology and the thickness of Mo2C crystals are strongly affected by the impurities in the system, the thickness of the copper substrate, and the graphene presence on Cu surface prior to Mo2C formation. Our studies show that during the CVD process, orthorhombic Mo2C crystals grow along the [100] direction on two different regions: directly on Cu surface or on graphene covered regions. Mo2C crystals that form on graphene are found to be thinner and less defective compared to the ones formed on the Cu surface. This is attributed to graphene acting as an additional diffusion barrier for Mo atoms diffusing through the copper. In addition to the graphene beneath the Mo2C crystal, Raman studies indicate that graphene may grow also on top of the Mo2C crystal, forming a graphene/Mo2C/graphene sandwich structure which may offer interesting properties for electronic applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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CVD synthesis and characterization of thin Mo₂C crystals

et al. 2020

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“…With the purpose of controlling the morphology of the crystals, various groups have successfully studied the effects of various processing parameters such as the thickness of Cu foil [7][8][9] , CH4:H2 ratio 6,8,[10][11][12][13] , and duration 6,8,[10][11][12]14 . Although temperature is a very critical processing parameter, in this process the choice of temperature is very limited (above 1085 C) because Cu must be in the liquid state to allow the diffusion of Mo atoms through Cu towards the surface.…”

Section: Results Is the Formation Of 2mo + C  Mo2cmentioning

confidence: 99%

Low Temperature Synthesis and Growth Model of Thin Mo2C Crystals on Indium

Çaylan

Büke

2020

Preprint

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CVD method is a promising technique to produce Mo2C crystals with large-area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 C) prompted a research for alternatives. In this study, we report the synthesis of large-area thin Mo2C crystals on liquid In surface at 1000 C for the first time. SEM, EDS, Raman Spectroscopy, XPS and XRD studies show that the hexagonal shaped Mo2C crystals, that are orthorhombic, grow along the [100] direction together with amorphous carbon thin film on In. The growth mechanism is examined and discussed in detail and a model is proposed. The AFM studies agree well with the proposed model showing that the vertical thicknesses of the Mo2C crystals decrease inversely with the thickness of the In for the given reaction time.

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Recent Advances in Growth of Transition Metal Carbides and Nitrides (MXenes) Crystals

Fan

Zhang

et al. 2022

Adv Funct Materials

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As a novel family of 2D materials, MXenes have drawn intensive interests owing to its fascinating property profile. The ability to grow high‐quality MXenes in a controllable way would in turn further promote the development of fabrication techniques and expand wide advanced applications. Then 2D MXenes crystals are highly desirable and many approaches have been explored to realize the mass production. Chemical vapor deposition (CVD) provides compelling benefits over other alternatives in controllability, uniformity and scalability. In this review, the recent advances in growth of MXenes crystals by CVD method will comprehensively present. Several typical kinds of MXenes crystals are demonstrated to be fabricated with a precise control in terms of size, morphology and thickness. Further, a series of MXenes heterostructures are constructed including vertical and lateral spatial orientations. Then, the properties and applications of MXenes crystals are exhibited, of which superconductivity and electrochemical catalysts will be mainly emphasized. Finally, the authors put forward views on the future development in the synthesis of MXenes. With continuous efforts devoted, a bright future of MXenes crystals prepared by CVD is expected.

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Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo 2 C heterostructures over liquid catalyst

Cited by 47 publications

References 36 publications

CVD synthesis and characterization of thin Mo₂C crystals

CVD synthesis and characterization of thin Mo₂C crystals

Low Temperature Synthesis and Growth Model of Thin Mo2C Crystals on Indium

Recent Advances in Growth of Transition Metal Carbides and Nitrides (MXenes) Crystals

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Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo 2 C heterostructures over liquid catalyst

Cited by 47 publications

References 36 publications

CVD synthesis and characterization of thin Mo2C crystals

CVD synthesis and characterization of thin Mo2C crystals

Low Temperature Synthesis and Growth Model of Thin Mo2C Crystals on Indium

Recent Advances in Growth of Transition Metal Carbides and Nitrides (MXenes) Crystals

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Product

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CVD synthesis and characterization of thin Mo₂C crystals

CVD synthesis and characterization of thin Mo₂C crystals