Insight into the contact resistance problem by direct probing of the potential drop in organic field-effect transistors

Weis, Martin; Lin, Jack; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

doi:10.1063/1.3533020

Cited by 30 publications

(25 citation statements)

References 25 publications

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“…If the voids could be main components of the disordered layer, the MTR model would not be applicable to the disordered region any more, and the estimation of the trap density would be impossible. Strictly speaking, the detailed analysis of the disordered layer needs direct observation of the electrode/ semiconductor interface under device operation by measuring surface potential [1] or optical second harmonic generation [13]. However, it is worth noting that our simulation method can let us have an insight into the existence of the disordered layer just from the normal current-voltage characteristics, suggesting the availability of our method in OTFT characterization.…”

Section: Tablementioning

confidence: 97%

“…The data-plot points with open circles show the channel mobility (l ch ) extracted by using Eq. (13). The solid lines are the curves best-fitted according to the power law dependence (Eq.…”

Section: Tablementioning

confidence: 99%

“…The TLM method is based on the assumption that the parasitic resistance is independent of the channel length, and that the channel resistance is in proportion to it. However, some examples of the channel length dependent parasitic resistance were recently reported for the OTFTs with Schottky contact [13,14]. In these reports, the parasitic contact resistance alters linearly with the change in the channel length, so that under-and over-estimation of the series parasitic resistance can occur depending on the channel length of the devices.…”

Section: Introductionmentioning

confidence: 98%

“…For understanding the operation mechanism and evaluating properly the potential of semiconductor materials toward the performance improvement of the OTFTs, the reliable characterization methods for the parasitic resistance and real channel resistance have been demanded, and actually various extraction procedures of physical parameters on carrier transport in the OTFTs have been proposed [5][6][7][8][9]. Transfer (or transmission) line method (TLM) is the most widespread technique utilized by many research groups to separately estimate the parasitic resistance and the channel resistance [10][11][12][13][14][15][16], where data plots of the total resistance given by the ratio of the drain voltage and the drain current over the channel length have to reveal linear relationships for each gate voltage. The TLM method is based on the assumption that the parasitic resistance is independent of the channel length, and that the channel resistance is in proportion to it.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Noda¹,

Wada²,

Toyabe³

2014

Organic Electronics

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Section: Tablementioning

confidence: 97%

“…The data-plot points with open circles show the channel mobility (l ch ) extracted by using Eq. (13). The solid lines are the curves best-fitted according to the power law dependence (Eq.…”

Section: Tablementioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Noda¹,

Wada²,

Toyabe³

2014

Organic Electronics

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“…In this paper, we report the utilization of CuTCNQ as a buffer layer affiliated with copper electrodes that predominately enhanced the electrical performance of bottom-contact OFETs based on single crystals of anthracene derivative H-Ant. To the best of our knowledge, a large amount of work have been dedicated to interface engineering of thin-film OFETs [22][23][24], whereas our work is the first example for the single crystal OFETs to lower contact barrier at the metal/organic interface by modification of the metal electrodes.…”

Section: Introductionmentioning

confidence: 98%

Modulating the metal/organic interface via CuTCNQ decorated layer toward high performance bottom-contact single-crystal transistors

Wang

et al. 2015

Sci. China Chem.

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The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain electrodes decorated by metal charge transfer salt (CuTCNQ) were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold electrode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match between electrodes and semiconductor. metal charge transfer salt, anthracene derivative, organic single-crystal field-effect transistors

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Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

2012

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A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics. In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics. With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1-1 cm(2)/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the field for a long time. Only recently, as the understanding of the rather complex physical processes at the metal/semiconductor interfaces has improved, more general approaches, with a validity that extends to several materials, are being proposed and successfully tested in the literature. Only a combined scientific and technological effort, on the one side to fully understand contact phenomena and on the other to completely master the tailoring of interfaces, will enable the development of advanced organic electronics applications and their widespread adoption in low-cost, large-area printed circuits.

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Insight into the contact resistance problem by direct probing of the potential drop in organic field-effect transistors

Cited by 30 publications

References 25 publications

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact

Modulating the metal/organic interface via CuTCNQ decorated layer toward high performance bottom-contact single-crystal transistors

Charge Injection in Solution‐Processed Organic Field‐Effect Transistors: Physics, Models and Characterization Methods

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