Various less-toxic substitutes for the Pb 2+ -based perovskites have been proposedwherein Sn 2+ -based metal halide perovskites (namely, Sn-PVSKs) hold the best prospect due to their comparable optoelectronic properties to Pb analogues. Nevertheless, the intrinsic instability and unfavorable crystallization of Sn-PVSKs place restrictions on both the device performance/durability and the fabrication reproducibility/large-scale manufacturing, respectively. Therefore, numerous attempts have been directed at exploring the underlying mechanisms of Sn-PVSKs and acquiring high-quality, ambient-stable thin films. In this review, a retrospect is firstly given on the milestones and general properties of paradigm ABX 3 structured Sn-PVSKs. Then, their electronic structure evolution, photo-physics process and degradation pathways are thoroughly interpreted. The gained understanding triggers various strategies exploited in the categories of synthetic conditions, compositions, phase components as well as device architecture for diverse optoelectronic applications. The final section summarizes key advances in Sn-PVSKs and meanwhile offers the guidance for future improvements that depends critically on these methodologies.