Insights into the Influence of Key Preparation Parameters on the Performance of MoS2/Graphene Oxide Composites as Active Materials in Supercapacitors

Abstract

Advances in energy storage and energy conversion play an essential role nowadays because the energy demands are becoming greater than ever. To overcome the actual performances of the materials used to build supercapacitors, a combination of transition metal dichalcogenides (TMDCs) and graphene oxide (GO) or reduced graphene oxide (rGO) as graphene-based structures are often studied for their excellent properties, such as high specific area and good electrical conductivity. Nevertheless, synthesis pathways and parameters play key roles in obtaining better materials as components for supercapacitors with higher technical performances. Driven by the desire to understand the influence of the structural and morphological particularities on the performances of supercapacitors based on MoS2/graphene oxide (GO) composites, a survey of the literature was performed by pointing out the alterations induced by different synthesis pathways and key parameters to the above-mentioned particularities.

A comprehensive review of synthesis, structure, properties, and functionalization of MoS2; emphasis on drug delivery, photothermal therapy, and tissue engineering applications

“…The main advantage of the lithium intercalation method is the access to the metal phase 1T, which is created by transferring the load from Li to MoS 2 . The 2H to 1T atomic structure rearrangements in this method occur [75].…”

The Optical Properties of Sub-micrometer WS2 Preparing Using Electrochemical Fabrication

“…Previous studies reported the nanoscale TMDCs exhibit unique characteristics such as enhancement of photoluminescence [20,21], high hole mobility [22], and high capacitance [23]. They have been proposed for optoelectronic devices [24][25] and hole transport layer in solar cells [26].Furthermore the sub micrometer TMDCc particles also show interesting features such as high flexibility and conductivity [27,28], high current density [29], and adjustable light emission [30] which open for applications in submicrometer thin antennas [27], sub-micrometer channel of field effect transistor [28 ], supercapacitor electrode [29], and light source [30].…”