Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing-Dependent Plasticity

Kwon, Min-Woo; Kim, Hyungjin; Park, Jungjin; Park, Byung‐Gook

doi:10.5573/jsts.2015.15.6.658

Cited by 6 publications

(3 citation statements)

References 10 publications

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“…A typical asymmetric form of STDP (fig. S11, A and B) was obtained using an ONW ST, which could be useful in the construction of a network (30)(31)(32).…”

Section: Resultsmentioning

confidence: 99%

Organic core-sheath nanowire artificial synapses with femtojoule energy consumption

et al. 2016

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“…A typical asymmetric form of STDP (fig. S11, A and B) was obtained using an ONW ST, which could be useful in the construction of a network (30)(31)(32).…”

Section: Resultsmentioning

confidence: 99%

Organic core-sheath nanowire artificial synapses with femtojoule energy consumption

et al. 2016

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“…The STM is important to improve the energy efficiency of neuron circuits, and the floating body effect can reproduce the STM function. 33) Neuron circuits using SOI-FETs with impact ionization require a high drain or source voltage. 15,16,18,21) Therefore, there is a concern about the damage induced by high energy carriers.…”

Section: Resultsmentioning

confidence: 99%

Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor

Mori

Ida

2021

Jpn. J. Appl. Phys.

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In this study, integrate and fire neuron by using a dual-gate (DG) PN-body tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) was investigated. We found out that the DG PNBT SOI-FET has the integrate and fire function in a single device. The floating body and the positive feedback effect can perform the functions of the capacitor and comparator, respectively. The device can generate a continuous spike and also a single spike signal with the additional reset scheme. The reset action requires a recovery time, which can be controlled by voltage conditions. It has a chance of making a refractory period function. These characteristics mean that it is possible to realize the capacitor-less small footprint neuron circuit with the DG PNBT SOI-FET.

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“…In order to enable low-power and high-speed operations, a poly-Si semi-floating gate (SFG) structure with a tunneling field-effect transistor is adopted for realizing short-term potentiation (STP), and a SiN charge-trap layer is stacked on the SFG for realizing long-term potentiation (LTP) operation. Further, we have obtained the spike-timing-dependent plasticity (STDP) characteristic [11,12,13]. Finally, we propose a novel synaptic device that has STP/LTP capabilities with STDP operation which are the essential functions of the human biological synapse.…”

Section: Introductionmentioning

confidence: 99%

Design and Characterization of Semi-Floating-Gate Synaptic Transistor

Cho

Lee

et al. 2019

Micromachines

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In this work, a study on a semi-floating-gate synaptic transistor (SFGST) is performed to verify its feasibility in the more energy-efficient hardware-driven neuromorphic system. To realize short- and long-term potentiation (STP/LTP) in the SFGST, a poly-Si semi-floating gate (SFG) and a SiN charge-trap layer are utilized, respectively. When an adequate number of holes are accumulated in the SFG, they are injected into the nitride charge-trap layer by the Fowler–Nordheim tunneling mechanism. Moreover, since the SFG is charged by an embedded tunneling field-effect transistor existing between the channel and the drain junction when the post-synaptic spike occurs after the pre-synaptic spike, and vice versa, the SFG is discharged by the diode when the post-synaptic spike takes place before the pre-synaptic spike. This indicates that the SFGST can attain STP/LTP and spike-timing-dependent plasticity behaviors. These characteristics of the SFGST in the highly miniaturized transistor structure can contribute to the neuromorphic chip such that the total system may operate as fast as the human brain with low power consumption and high integration density.

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Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing-Dependent Plasticity

Cited by 6 publications

References 10 publications

Organic core-sheath nanowire artificial synapses with femtojoule energy consumption

Organic core-sheath nanowire artificial synapses with femtojoule energy consumption

Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor

Design and Characterization of Semi-Floating-Gate Synaptic Transistor

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