Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Rao, Sandro; Pangallo, Giovanni; Corte, Francesco G. Della

doi:10.3390/s16010067

Cited by 15 publications

(5 citation statements)

References 29 publications

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“…In 2, T A explicitly appears as a linear term, but it also implicitly and non-linearly affects I S and R S , while η = 1 if the device operates in the diffusion regime. However, it has been demonstrated in many diodes [29]- [31], [34] that an excellent linearity between V F and T A can be reached, in a wide temperature range, by properly choosing I F .…”

Section: Experimental Setup and Characterization Methodsmentioning

confidence: 99%

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

et al. 2020

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A detailed study about the direct measurement of junction temperature T J of off-the-shelf power light emitting diodes (LED) is presented. The linear dependence on temperature of the voltage drop across the device terminals at a constant current is in particular exploited and fully characterized, in the temperature range from T = 35 • C to 135 • C, with tests repeated at one thousand different probe currents. The accurate experimental data, obtained on several LED samples bearing two different part numbers, are reported, showing that they exhibit a high degree of linearity in wide current ranges, a circumstance that allows for a fast and reliable calibration as sensors. The measurement error is also fully characterized in terms of repeatability and stability over time, with measurements repeated after 600, 900, 1200 and 1800 hours of applied electro-thermal stress, demonstrating that the relevant sensor parameters stabilize after a few hundred hours of operation. A full set of parameters is provided for the two device models, allowing the direct use of each LED for the self-monitoring of the junction temperature and ensure compliance with their safe operating area over time. Moreover, a procedure and a simple circuit for the real time measurement of T J , while the LED is on, are presented. The procedure does not require a stable current source, and relies instead on the application of a sub-threshold current ramp for such a short time that the change in the output light is not perceived by human eyes. INDEX TERMS LED, light emitting diodes, junction temperature, temperature sensors, diode sensors.

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Section: Experimental Setup and Characterization Methodsmentioning

confidence: 99%

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

et al. 2020

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“…This method can be applied in many power applications, including signal-conditioning circuits for sensors [32], and for wide-band materials-based switching system control where, changes in temperature above the temperature limit, lead to a mean time to failure reduction or device disruption.…”

Section: Discussionmentioning

confidence: 99%

Junction temperature measurement in optically-activated power MOSFET

Rao¹,

Mallemace²,

Casalino³

et al. 2022

J. Opt.

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The temperature-dependent optical properties of silicon carbide (SiC), such as refractive index and reflectivity, have been used for a direct monitoring of the junction temperature of a power MOSFET. In particular, the optical response of a 4H-SiC MOSFET-integrated Fabry-Perot cavity to temperature changes has been investigated through parametric optical simulations at the wavelength of λ=450 nm. The reflected optical power exhibited oscillatory patterns caused by the multiple beam interference for which the MOSFET epilayer, between the gate-oxide and the doped 4H-SiC substrate, acts as a Fabry-Perot etalon. These results were used to calculate the refractive index change and, therefore, the optical phase shift of ∆φ= π/2 corresponding to a temperature variation that can be considered as a warning for the device “health”. In practical applications, the periodic monitoring of the optic spectrum at the interferometric structure output gives an essential information about the device operating temperature condition that, for high power operations, may lead to device damages or system failure.

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“…Thanks to the good linearity, the pre-calibration can be simply processed with only two VF values at different temperature. However, the relatively large Rs at the fully turn-on region degrades the temperature sensing ability and increases the power loss [27]. Therefore, the forward voltages in the sub-threshold region are usually plotted versus temperatures to evaluate the feasibility of temperature sensing.…”

Section: Characteristics and Discussionmentioning

confidence: 99%

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

et al. 2021

IEICE Electron. Express

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To realize the in-situ temperature monitoring of power device, three kinds of Schottky barrier diodes (SBDs) are designed to reveal the effect of geometry on the temperature sensitivity. The current-voltage characteristics at different temperature demonstrate that all the circular-, finger-, and 8-finger-SBDs show good rectification. The forward voltage at a specific sub-threshold current level presents good linearity versus temperature. In addition, the deduced sensitivity presents no dependency on the geometry but is determined by the ideality factor and current density. The sensing mechanism of SBD sensor is explained by the thermionic emission model. Those results are beneficial to the design and fabrication of temperature sensor.

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Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Cited by 15 publications

References 29 publications

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

Temperature Sensing Characteristics and Long Term Stability of Power LEDs Used for Voltage vs. Junction Temperature Measurements and Related Procedure

Junction temperature measurement in optically-activated power MOSFET

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

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