2003
DOI: 10.1109/lmwc.2003.817146
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Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process

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Cited by 71 publications
(28 citation statements)
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“…Others like in [4] propose to increase the gain by covering the whole chip with a lens which needs extra bulky space out of the chip. Meanwhile, the micromachining technique and proton implantation process have been proposed to improve the radiation efficiency by reducing the substrate losses [5][6], but the shielding problem from other circuitry would still remain. including bowtie antenna (from [7]).…”
Section: Introductionmentioning
confidence: 99%
“…Others like in [4] propose to increase the gain by covering the whole chip with a lens which needs extra bulky space out of the chip. Meanwhile, the micromachining technique and proton implantation process have been proposed to improve the radiation efficiency by reducing the substrate losses [5][6], but the shielding problem from other circuitry would still remain. including bowtie antenna (from [7]).…”
Section: Introductionmentioning
confidence: 99%
“…Though the initial onchip antenna design has been reported almost a decade ago, not until recently, this concept has gained popularity in RF researchers. Many monolithic Si integrated antennas have been demonstrated in recent years [3][4][5][6]. The on-chip antenna design in literature is mostly restricted to higher frequencies like 10 GHz and above due to large size of antennas at lower frequencies.…”
Section: Introductionmentioning
confidence: 99%
“…The on-chip antenna design in literature is mostly restricted to higher frequencies like 10 GHz and above due to large size of antennas at lower frequencies. On-chip antennas, as described in the literature, are either utilized to provide inter and intra-chip wireless interconnects [3] or for short-range air transmission [4]. The former antennas display high transmission loss and are not characterized for element gain and radiation pattern whereas the latter often utilize additional processing steps to increase the resistivity of Si substrates in an attempt to enhance the antenna performance.…”
Section: Introductionmentioning
confidence: 99%
“…In [17], a special silicon lens is added at the bottom of the chip to improve the gain to 2 dBi. In [18], a costly ion implantation process is added to increase the substrate resistivity and improve the gain to 6.4 dBi. Besides the efficiency and cost issues, the on-chip antennas occupy a significant portion of IC area and provide poor horizontal radiation pattern, which limit their applications in inter-chip communications.…”
Section: Introductionmentioning
confidence: 99%