Integrated cleaning and handling automation of NXE3100 reticles

Jonckheere, R.; Waehler, Tobias; Baudemprez, Bart; Dietze, Uwe; Dress, Peter; Brux, O.; Ronse, Kurt G.

doi:10.1117/12.923321

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2013

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“…Extreme ultraviolet lithography (EUVL) technology is one of the promising technologies for mass production of an integrated chip with a half-pitch of 22 nm or less and evidently lots of efforts have been devoted to develop the related technologies, such as light sources, masks, optical components and devices, [1][2][3][4][5][6][7][8][9][10] and so on. Among them, an EUV pellicle, a thin film of a few tens of nanometer thickness supported by a mesh structure [Fig.…”

Section: Introductionmentioning

confidence: 99%

Study of Temperature Behaviors for a Pellicle in Extreme-Ultraviolet Lithography: Mesh Structure

Kim

2013

Jpn. J. Appl. Phys.

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We report a theoretical study of the temperature behavior for a mesh structure of a pellicle in extreme-ultraviolet (EUV) lithography. Based on our modified heat transfer model, we calculate the temperature dependence of the pellicle mesh on the mesh materials and the structural parameters. The calculated results show that temperature change of the mesh is much slower than the thin film due to its high heat capacity and its saturation temperature has strong dependence on the material and the ratio of the cross-sectional area of the line to the side-cooling surface area of the mesh. Thermal damage is again minimal for the mesh support as is the case of a thin pellicle film.

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Section: Introductionmentioning

confidence: 99%

Study of Temperature Behaviors for a Pellicle in Extreme-Ultraviolet Lithography: Mesh Structure

Kim

2013

Jpn. J. Appl. Phys.

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show abstract

Integrated cleaning and handling automation of NXE3100 reticles

Cited by 1 publication

References 0 publications

Study of Temperature Behaviors for a Pellicle in Extreme-Ultraviolet Lithography: Mesh Structure

Study of Temperature Behaviors for a Pellicle in Extreme-Ultraviolet Lithography: Mesh Structure

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