Integrated electro-optic modulators in x-cut lithium niobate thin film

Han, Huijian; Xiang, Bingxi

doi:10.1016/j.ijleo.2020.164691

Cited by 18 publications

(16 citation statements)

References 30 publications

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“…At high values of n eff , the addressed product seemed to have similar values for the three introduced refractive indices (bulk, Si and LN). The product demonstrated a range from 2.12 to 2.25 at a device length of 2 cm, which is within the acceptable Vπ.L value that was reported previously [32,33]. The variation of the Vπ.L as a function of the Si WG width is shown in Fig.…”

Section: Resultssupporting

confidence: 67%

Design And Optimization of Integrated Mach_ Zehnder Modulators In X-Cut Lithium Niobate Thin Film

Mohammed¹,

Fakhri²,

Abass³

et al. 2021

Preprint

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The Mach-Zehnder electro-optic modulator (MZM) was designed and fabricated using the AFM COMSOL program and the pulse laser deposition (PLD) technique. The PLD technique was used to deposit silicon, silicon oxide and LN thin film. Previously estimated optical properties of the prepared films were employed in the theoretical design of the modulator. Optimum device parameters were obtained, which delivered a considerable figure of merit (Vπ.L) values within the range of 2.12 to 2.25 at a device length of 2 cm.

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Section: Resultssupporting

confidence: 67%

Design And Optimization of Integrated Mach_ Zehnder Modulators In X-Cut Lithium Niobate Thin Film

Mohammed¹,

Fakhri²,

Abass³

et al. 2021

Preprint

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“…where T -temperature, 𝐵 0 (𝑇)~𝑒 −𝐸 𝑎 𝑘𝑇 -speed constant proportional to Arrhenius function. The equation (3) shows experimentally observed change of output optical power rather than the full physical nature of DC-drift. This profile can be used for comparative analysis of activation energy of DC-drift in EO-modulators with treatment structure of LiNbO3 near-surface layer.…”

Section: Temperature Stability Of Eo-modulators (Long-term Dc-drift)mentioning

confidence: 99%

“…Activation energy of DC-drift for test samples after treatment and reference samples was 1.5 and 0.8 eV, respectively. The obtained values are not directly activation energy of the material, but relate to the entire test system according to the equation (3). However what's important for us is comparative analysis of DC-drift in EO-modulators after treatment LiNbO3 structure obtained at identical process conditions and Ea calculations.…”

Section: Temperature Stability Of Eo-modulators (Long-term Dc-drift)mentioning

confidence: 99%

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Reduction of DC-drift in LiNbO3-based Electro-optical Modulator

Sosunov¹,

Ponomarev²,

Zhuravlev³

et al. 2021

Preprint

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This work involves results of research on short-term and long-term DC-drifts in electro-optical modulators based on annealed proton exchange waveguides in LiNbO3 crystals after wafer pre-annealing. The relaxation time of the DC-drift of the operating point for a short-term drift is minutes, and for a long-term drift, hours and days. DC-drift was measured by applying bias voltage and changing crystal temperature. Obtained results shows significant impact on stability of operating point in EO-modulators after treatment of defective structure of the near-surface layer of a LiNbO3 crystal. Treatment of the disturbed near-surface layer of a LiNbO3 crystal results in twice reduction of short-term DC-drift and increase of operation stability of electro-optical modulators during long-term measurement of temperature by activation energy calculation.

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“…It can increase the magnitude of the electric field which along the z-axis of the LiNbO 3 crystal in the EO interaction region, improving the EO modulation effect [15]- [17]. This character has been widely used in the electrode design of modulators in optical communication [18], [19]. According to the generation mechanism of the modulation asymmetry, the ridge waveguide structure can be used to reduce the modulation asymmetry of the MIOC.…”

Section: Introductionmentioning

confidence: 99%

Modulation Asymmetry Suppression of Multifunction Integrated Optic Circuit by Sinking Electrode

Liu

Zhang

et al. 2020

IEEE Access

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The modulation asymmetry of a multifunction integrated optic circuit (MIOC) indicates the difference in the phase response to modulation electric fields with the same magnitude but different directions, and is partly caused by the vertical component of the modulation signal. This introduces a nonlinear phase error that is difficult to compensate in fiber optic gyroscopes (FOGs), which needs to be suppressed. In this paper, a sinking-electrode MIOC design to suppress the modulation asymmetry is proposed and verified through numerical simulations. Optimal parameters of the gap, height, side-wall angle, and center position error of the sinking electrodes are obtained on the basis of the simulation results. With the proposed method, the modulation asymmetry of MIOC can be reduced from 5 × 10 −4 rad to 1 × 10 −6 rad, thus facilitating the development of high-performance FOGs. Furthermore, compared with the traditional electrode design, the sinking-electrode design can increase the tolerance for the manufacturing process, and the design configuration can be obtained through the general process method.INDEX TERMS Multifunction integrated optic circuit (MIOC), phase modulator, modulation asymmetry, electrode design.

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Integrated electro-optic modulators in x-cut lithium niobate thin film

Cited by 18 publications

References 30 publications

Design And Optimization of Integrated Mach_ Zehnder Modulators In X-Cut Lithium Niobate Thin Film

Design And Optimization of Integrated Mach_ Zehnder Modulators In X-Cut Lithium Niobate Thin Film

Reduction of DC-drift in LiNbO3-based Electro-optical Modulator

Modulation Asymmetry Suppression of Multifunction Integrated Optic Circuit by Sinking Electrode

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