Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples

Pala, Vipindas; Peng, Han; Wright, Peter; Hella, Mona M.; Chow, T. Paul

doi:10.1109/tpel.2011.2174803

Cited by 43 publications

(15 citation statements)

References 32 publications

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“…8 that with over a four-fold increase in BV can be obtained with only a 1.8x increase in resistance. This shows that the extrinsic components of the resistance (6) , including contact and interconnects are a significant fraction of the total ON resistance of the device.…”

Section: Extended Drain Phemtsmentioning

confidence: 95%

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Gallium Arsenide IC Technology for Power Supplies on Chip

et al. 2015

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This paper presents a power IC technology platform based on AlGaAs/InGaAs/AlGaAs pseudomorphic field-effect transistors (pHEMTs) on a GaAs substrate. A quantitative assessment of a foundry-available 11-V GaAs pHEMT process indicates that owing to their superior material properties, the intrinsic figure of merit for pHEMT switching devices exhibits an order of magnitude improvement over state-of-the-art silicon NMOS transistors. The characterization results for GaAs pHEMTs with a breakdown voltage up to 47 V are presented and shown to be comparable to GaN-based transistors for power switching applications. An integrated pHEMT DC-DC converter that can switch at frequencies above 100 MHz is demonstrated. A 4.2-V pHEMT buck converter designed for envelope tracking applications is able to achieve 88% conversion efficiency at 100 MHz.

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Section: Extended Drain Phemtsmentioning

confidence: 95%

“…Also shown in Fig. 9 is a theoretical comparison of the three (6) which indicates that for low voltage devices GaAs is the optimal technology platform for low voltage high frequency power electronics.…”

Section: Extended Drain Phemtsmentioning

confidence: 99%

Gallium Arsenide IC Technology for Power Supplies on Chip

et al. 2015

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“…The beauty of this concept is saving the footprint of the inductor and fully utilization of the available space. For example, [5]- [7] integrate the inductor on a silicon wafer substrate; [8] and [9] integrate the magnetics inside a printed circuit board (PCB) substrate. There are many other researchers exploring LTCC for power electronics applications [10]- [13].…”

Section: Introductionmentioning

confidence: 99%

FEA modeling of the low profile coupled inductor with non-uniform flux distribution

Lee

2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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The high frequency 3-dimension (3D) integrated Point-of-Load (POL) module has been demonstrated with more than 800W/in 3 power density, in which the low profile inductor serves as the substrate carrying the active components. The performance of the magnetic substrate can be further improved by inversed coupling two single-phase inductors. However, the non-uniform distributed flux and permeability in the low profile coupled inductor, raises some new challenges for its inductance and core loss modeling. The accuracy of the conventional reluctance and core loss model, which usually assume uniform flux and core loss density in the core, are questionable. Therefore, the Finite Element Analysis (FEA) simulation tool is used to develop the inductance and core loss models. With these FEA models, the coupled inductor substrates are designed and evaluated for Multi-MHz two-phase 3D integrated POL modules. The impact of the inversed coupling on the magnetic performance of the inductor substrate is also discussed. The comparison between coupled and non-coupled inductors reveals that the inversed coupling can reduce both the core volume and core loss by 40%. The analytical results are verified by the experimental data.

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“…In addition, the semiconductor heat dissipation in the converter limits the switching frequency [169]. For example, the inductor design is still a challenging issue for increasing the converter efficiency and power density.…”

Section: The Practical Rules For Mibc Scaling-upmentioning

confidence: 99%

“…The GaN switches will likely replace silicon-based semiconductors as the building block for tomorrow's converters [169].…”

Section: Improved High Frequency Circuit Topologiesmentioning

confidence: 99%

Efficiency and Power Density Improvement of Grid-Connected Hybrid Renewable Energy Systems utilizing High Frequency-Based Power Converters

Amin¹

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Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples

Cited by 43 publications

References 32 publications

Gallium Arsenide IC Technology for Power Supplies on Chip

Gallium Arsenide IC Technology for Power Supplies on Chip

FEA modeling of the low profile coupled inductor with non-uniform flux distribution

Efficiency and Power Density Improvement of Grid-Connected Hybrid Renewable Energy Systems utilizing High Frequency-Based Power Converters

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