2018
DOI: 10.1038/s41598-018-20097-7
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Integrated Optical Modulator Based on Transition between Photonic Bands

Abstract: An area efficient novel optical modulator with low operation voltage is designed based on integrated Mach-Zehnder Interferometer with a photonic crystal slab structure as the phase shifter. Plasma dispersion effect is utilized so that photonic band-to-band transition occurs at the operating frequency leading to a high index change (Δn = ~4) for π-phase shift on the modulator. This approach reduces the phase shifter length to a few micrometers (~5 µm) in a silicon on insulator platform and operating voltage req… Show more

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Cited by 27 publications
(21 citation statements)
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“…Consequently, even a slight inhomogeneity leads to an undesired refractive‐index nonuniformity in the intrinsic region. Our observations are consistent with the experimental results of Soref and Bennett, [ 61,62 ] and several relevant published works based on the P–I–N principles with carrier density injection of 4 × 10 17 cm −3 , [ 37 ] 4.1 × 10 18 cm −3 , [ 40 ] 1 × 10 19 cm −3 , [ 41 ] 10 18 –10 19 cm −3 , [ 42 ] and 2.93 × 10 19 cm −3 . [ 63 ]…”
Section: Resultssupporting
confidence: 93%
“…Consequently, even a slight inhomogeneity leads to an undesired refractive‐index nonuniformity in the intrinsic region. Our observations are consistent with the experimental results of Soref and Bennett, [ 61,62 ] and several relevant published works based on the P–I–N principles with carrier density injection of 4 × 10 17 cm −3 , [ 37 ] 4.1 × 10 18 cm −3 , [ 40 ] 1 × 10 19 cm −3 , [ 41 ] 10 18 –10 19 cm −3 , [ 42 ] and 2.93 × 10 19 cm −3 . [ 63 ]…”
Section: Resultssupporting
confidence: 93%
“…The modulation bandwidth is inversely proportional to the device footprint area. Implementing the device with a compact footprint, it is feasible to achieve modulation bandwidths larger than the optical bandwidth of resonances which is critical for achieving a high depth in optical signal modulation . Considering a lateral extent of 15 µm along the axis of nanobars for the proposed structure, the RC time constant is estimated τ RC = RC < 15 ps from device simulations when the applied bias voltage exceeds 0.5 V which yields a maximal modulation frequency of f m = 1/2 πτ RC > 10 GHz.…”
Section: Time‐modulated Metasurfacementioning
confidence: 99%
“…Considering that the modulation of carrier concentrations in the range of 10 16 –10 19 cm −3 across the intrinsic region requires bias voltage varying in the range of 0.75–1.75 V, modulation frequencies over 10 GHz can be achieved. We should emphasize that the bias voltage should exceed 0.5 V for attaining modulation frequencies over 10 GHz due to the high resistivity of p‐i‐n junction at low injection levels . Considering that the speed of on‐chip RF interconnects allow for modulation frequencies up to 100 GHz, a stable time‐modulated metasurface can be realized by applying radio‐frequency biasing signals for the elements.…”
Section: Time‐modulated Metasurfacementioning
confidence: 99%
“…One of the useful techniques to realize the phase shifters is using Photonic Crystal (PC) metamaterials. It is represented that PC metamaterials can tune the photonic dispersion so that one can build new optical devices with new functionalities [3,4,8,[10][11][12][13][14][15][16][17]. In fact, PC metamaterials could be built in a way which exhibit Dirac-cone photonic dispersion in the center of Brillouin-Zone in an arbitrary frequency using the concept of accidental degeneracy [15].…”
Section: Introductionmentioning
confidence: 99%