Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment

Delavaux, Jean-Marc; Granlund, S. W.; Mizuhara, O.; Tzeng, L.D.; Barbier, D.; Rattay, M.; Andre, F. St.; Kevorkian, A.

doi:10.1109/68.553108

Cited by 60 publications

(35 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is confirmed by the recent demonstrations of high-performance laser [19], amplifier [20] and an amplifying four-wavelength combiner [21]. A pigtailed amplifier module has been realized in an Er/Yb-doped phosphate glass and successfully, used as a booster amplifier in 10 Gb/s system experiment [22].…”

supporting

confidence: 49%

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Jaskorzyńska

1999

Acta Phys. Pol. A

View full text Add to dashboard Cite

This paper discusses Er-doped optical waveguides implemented in glass materials. The emphasis is put on physical limitations posed by concentration dependent nonlinear effects and on methods for their characterization. Examples of recently demonstrated, best performance integrated active devices are also given.PACS numbers: 42.65.-k Optical fibers and planar waveguides can be made active, i.e. exhibit amplification, by inserting rare-earth ions in their core. Most of the related research has been focused on fibers and planar waveguides doped with erbium (Er) because . they provide gain at the 1.5 µm band, which is of particular interest for telecommunication applications. For pumping Er ions one typically uses laser diodes at 980 nm or 1.48 µm, as it is illustrated in Fig. 1.Planar active waveguides are considered to be an attractive option for realizing integrated optical devices with gain [1,2]. A prerequisite for realizing practical active devices is that a sufficiently large gain can be obtained at reasonable pumping powers. While this can easily be achieved in a few meter long active fibers, their planar counterparts tend to suffer from low gain efficiencies. Apart from much higher losses, the main difficulty is that a usable gain must be accumulated over a much shorter (a few centimeters) length. This. typically requires two orders of magnitude higher Era+ concentrations, at which parasitic energy transfer between excited Er-ions reduces the gain [3][4][5][6][7][8][9][10]. The mechanism of the parasitic effect is illustrated in Fig. 2. The excitation energy (1) is transferred (2) from one excited ion (donor) to the other (acceptor), which typically occurs via electric dipole-dipole interaction. Consequently the donor relaxes (2) to the ground state while the acceptor is upconverted to the 4I9/2 state (2). This is usually followed by two fast, non-radiative relaxation processes (3,4a) down to the metastable level 4 l13/2. However, a small fraction of the ions relaxes to the ground level (4b) emit-. ting photons at 980 nm. As a result only one of the two pump photons absorbed by the Er ions can be used for amplification at 1.5 µm. The energy of the other

show abstract

supporting

confidence: 49%

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Jaskorzyńska

1999

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…Erbium-doped amplifiers and lossless splitters have been formed by ion exchange in silicate [2] or phosphate [3] glass matrixes and by ion implantation into Al O [4]. Topographic guides have been formed in Er-doped silicate and phosphate glasses deposited by sputtering [5], [6].…”

mentioning

confidence: 99%

Fiber-device-fiber gain from a sol-gel erbium-doped waveguide amplifier

Huang

Syms

Yeatman

et al. 2002

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Abstract-An erbium-doped silica-on-silicon planar waveguide optical amplifier is described. The active core is a topographic guide formed from aluminophosphosilicate glass doped with erbium and ytterbium. The buffer is formed from silica deposited by thermal oxidation and the cladding from borophosphosilicate glass obtained by plasma-enhanced chemical vapor deposition. The use of low process temperatures allows relatively heavy doping and careful control of the core etching allows low background insertion losses to be obtained. Spontaneous emission and gain measurements are given and 5.4-dB fiber-device-fiber gain is demonstrated using a 5-cm-long chip pumped using a 980-nm laser diode at 175-mW pump power.Index Terms-Erbium, optical amplification, sol-gel, waveguides.T HE ERBIUM-DOPED fiber amplifier (EDFA) has been highly successful as a low-noise gain block at 1535-nm wavelength. Er-doped waveguide amplifiers (EDWAs) have also attracted attention, because of their potential for integration with pump lasers and filters [1]. The main difficulty in constructing an EDWA lies in providing suitably high gain in a short length, which requires high Er doping without concentration-dependent effects.Erbium-doped amplifiers and lossless splitters have been formed by ion exchange in silicate [2] at 980 nm, high pump powers are required. However, pump powers are reduced by codoping with Yb , which has a large cross section and which may transfer energy nonradiatively to the I level of Er . Although erbium may be incorporated in silica by PECVD, difficulties are caused by the low vapor pressure of erbium compounds. There is, therefore, a need to investigate alternative processes for depositing Er-doped silicate glasses, which can also incorporate the range of codopants needed to tailor the Er environment. One possibility is the sol-gel process. Thick layers of silicate glasses can be formed as multilayers, using repetitive cycles of spin-coating and rapid thermal annealing (SC-RTA), with careful control of the annealing temperature [9]. These layers may then be formed into buried channel guides by the conventional route of reactive ion etching and cladding.Early sol-gel guides were mainly based on TiO -SiO . However, TiO is unsuitable for sol-gel optics, because of its high process temperatures and tendency to form crystalline phases, including erbium titanate. Since then, improved guides have been developed using a range of dopants such as P O , B O , Al O , and Ga O . Some dopants have been used to control process temperatures in addition to altering the refractive index. Rare earth dopants such as Nb O , Er O , and Yb O have also been incorporated. Some progress has been made toward fabricating EDWAs by SC-RTA. For example, relative gains of 1.1 dB/cm have been obtained using Yb-Er-codoped silica-titania, but only in a striploaded geometry with fiber coupling and propagation losses so high that no external gain was observed [10]. In this letter, we demonstrate the first practical sol-gel EDWA. The device is based on a ...

show abstract

“…In the past, transmission experiments at up to 10 Gbit/s using an EDWA have been carried out [8][9][10] and a packaged photoreceiver using an EDWA for 40 Gbit/s applications has also been reported [11]. In this letter we demonstrate amplification at 170 Gbit/s in an Al2O3:Er3 + EDWA deposited on thermally oxidized silicon. )…”

Section: Introductionmentioning

confidence: 84%

170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

Bradley¹,

Silva²,

Gay³

et al. 2009

Opt. Express

View full text Add to dashboard Cite

Abstract:Signal transmission experiments were performed at 170 Gbit/s in an integrated Al 2 O 3 :Er 3+ waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2 7 -1 bit sequence. ©2009 Optical Society of America

show abstract

Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment

Cited by 60 publications

References 4 publications

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Fiber-device-fiber gain from a sol-gel erbium-doped waveguide amplifier

170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

Contact Info

Product

Resources

About