Integrated Photonics Technology for Earth Science Remote-Sensing Lidar

Sang, Fengqiao; Fridlander, Joseph; Rosborough, Victoria; Brunelli, Simone Tommaso Šuran; Coldren, L.A.; Klamkin, Jonathan; Chen, Jeffrey; Numata, Kenji; Kawa, Randy; Stephen, Mark

doi:10.1109/igarss47720.2021.9553656

Cited by 1 publication

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…PICs attract a lot of research interest and are shown to be promising candidates in a range of applications including sensing [40,41], especially in biomedical contexts [42,43] and photonic computing [44] but to date, research has been primarily driven the introduction and scaling of PICs for optical communications [45]. PICs offer strong advantages over electronic integrated circuits, namely higher available speed, large integration capacity, and compatibility with existing processing flows [46].PICs provide opportunities for miniaturisation of bulky optical systems, providing better access to bio-sensing spectroscopy applications to enable point-of-care diagnostics [47] and size and weight appropriate beam steering for light based sensing systems for utilisation in cars and drones [48].…”

Section: Photonic Integrated Circuits (Pics)mentioning

confidence: 99%

Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Jarvis

Maglio

Shutts

et al. 2022

Novel in-Plane Semiconductor Lasers XXI

View full text Add to dashboard Cite

Three techniques for improving gain in InAs quantum dot lasers are examined.Silicon photonics is a promising solution for meeting increasing global data bandwidth demands. However, silicon itself is a poor emitter due to its indirect bandgap. One potential candidate for light sources for on-chip devices is the monolithic growth of III-V quantum dot materials onto silicon, however, III-V quantum dot materials exhibit reduced gain due to the differences in the population of electron and hole states and ultimately because of the difference in electron and hole effective masses. P-type modulation doping is a well-established strategy for improving gain in InAs quantum dot lasers on both native GaAs and silicon substrates. The doping density and positioning is optimised for a given wafer design, and ground state lasing at room temperature for a 400µm lasing cavity is demonstrated, in addition to reduced sensitivity of threshold current to temperature.Optimized p-type modulation doping is compared to a relatively new approach to enhancing gain -direct n-type doping of the quantum dots. It is found to improve the gain in low loss operation, unlike p-type modulation doping. However, direct n-type doping detrimentally showed increased threshold current dependence compared with p-type modulation doping and decreased the maximum temperature at which ground state lasing could be attained.A novel third method is investigated in which both p-type modulation doping and direct n-type doping are applied to a device simultaneously, referred to as co-doping. Co-doping reduced the threshold current density from 245Acm −2 to 132Acm −2 at 27 • C and 731Acm −2 to 312Acm −2 at 97 • C, compared to undoped devices. The reduction was greater than for either individual doping strategy alone. Co-doping also retained the beneficial reduction in the sensitivity of the threshold current density to temperature provided by the p-type modulation doping.

show abstract