2008
DOI: 10.1038/nnano.2008.98
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Integrated three-dimensional microelectromechanical devices from processable carbon nanotube wafers

Abstract: In order to be useful as microelectromechanical devices, carbon nanotubes with well-controlled properties and orientations should be made at high density and be placed at predefined locations. We address this challenge by hierarchically assembling carbon nanotubes into closely packed and highly aligned three-dimensional wafer films from which a wide range of complex and three-dimensional nanotube structures were lithographically fabricated. These include carbon nanotube islands on substrates, suspended sheets … Show more

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Cited by 263 publications
(204 citation statements)
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“…Low-density bent CNT micropillars can be transformed into robust, densely packed CNT structures by capillary forming (Fig. 6a,b) 34,36,37 . To do so, the substrate is exposed to a stream of heated acetone vapour, causing acetone to condense onto the CNTs and substrate, and infiltrate each CNT microstructure.…”
Section: Discussionmentioning
confidence: 99%
“…Low-density bent CNT micropillars can be transformed into robust, densely packed CNT structures by capillary forming (Fig. 6a,b) 34,36,37 . To do so, the substrate is exposed to a stream of heated acetone vapour, causing acetone to condense onto the CNTs and substrate, and infiltrate each CNT microstructure.…”
Section: Discussionmentioning
confidence: 99%
“…They form conics and decrease the number of electron emission sites. The mechanism of CNT bundling can be explained by the fact that capillary and surface tension forces of solutions act on CNTs at their flexible tips during drying (Busta et al, 2004;Futaba et al, 2006;Hayamizu et al, 2008) and that the tips of CNTs gather to each other by the van der Waals interactions after they are completely dried. The density of as-grown CNTs shown in Fig.4 was 4.4×10 9 cm -2 .…”
Section: Effect Of Post Treatment Of Vertically Aligned Cntsmentioning
confidence: 99%
“…12 Recently, in-situ techniques were also used to characterize the electrical performance of Germanium (Ge) nanowires 13 and MWNTs 14 that were physically welded or connected to the ends of metallic probe tips for NEMS applications. In our work on 3D NEMS, we have examined the nanomechanical properties of the tubes using in situ techniques which are described in Section 3.2.…”
Section: Nems Switch Topologiesmentioning
confidence: 99%