Integrated Tunable CMOS Laser for Si Photonics

Marchena, Elton; Creazzo, Tim; Krasulick, Stephen; Yu, Peter T.; Orden, Derek Van; Spann, John; Blivin, Christopher C.; Dallesasse, John M.; Varangis, P.M.; Stone, R.; Mizrahi, Amit

doi:10.1364/ofc.2013.pdp5c.7

Cited by 15 publications

(15 citation statements)

References 3 publications

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“…More S results [11,12,13]. We demonstrate that the use of two silicon ring resonators allows us to achieve a tuning range of more than 45 nm and a side mode suppression ratio (SMSR) larger than 40 dB over the entire tuning range [11].…”

Section: Introductionmentioning

confidence: 88%

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

et al. 2014

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Abstract-This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s. Index Terms-Hybrid photonic integrated circuits, silicon laser, semiconductor lasers, silicon-on-insulator (SOI) technology, adiabatic taper.

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Section: Introductionmentioning

confidence: 88%

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

et al. 2014

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“…In this Laser, the gain region is metal-bonded onto the silicon substrate and embedded within the silicon chip. Moreover, the laser structure is buried under a silicon dioxide layer making the laser natively hermetic and eliminating the need for costly gold box packages 4 . When comparing the test results with a market-leading InP tunable laser, no difference on the transmission performance could be observed.…”

Section: Resultsmentioning

confidence: 99%

Field trials of a coherent UDWDM PON: Real-time LTE backhauling, legacy and 100G coexistence

Rohde

Gottwald

Rosner

et al. 2014

2014 the European Conference on Optical Communication (ECOC)

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“…The next column is waferto-wafer assembly, including oxide bonding [27] and organic bonding [28] of III-V gain regions. The next column is die-towafer assembly, including inserting III-V die into cavities in the Si wafer and then patterning the waveguides [29]. The advantages of all the left three columns is that the full device can be tested on the wafer level, before it is diced out.…”

Section: Si Photonic Active Elementsmentioning

confidence: 99%

Silicon photonic integration in telecommunications

Doerr¹

2015

Front. Phys.

198

113

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Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, at a given cost increases, silicon photonics makes more and more economic sense.

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Integrated Tunable CMOS Laser for Si Photonics

Abstract: An integrated tunable C band laser fabricated in a commercial CMOS foundry is discussed. The laser is embedded in the silicon chip, and is hermetically sealed. Preliminary optical characterization results are presented.

Cited by 15 publications

References 3 publications

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Field trials of a coherent UDWDM PON: Real-time LTE backhauling, legacy and 100G coexistence

Silicon photonic integration in telecommunications

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