Integration methodology of chemical vapor deposition TiN, chemical vapor deposition W and W chemical mechanical planarization for sub-quarter micron process application

Abstract

Chemical vapor deposition ͑CVD͒ W plugs have been widely used for device metallization with excellent conformity in small contacts/vias with high aspect ratio ͓J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicides ͑Noyes, 1991͔͒. However, some unexpected plug fill such as plug loss and key hole exposing post tungsten chemical mechanical planarization ͑WCMP͒ still happened while going to smaller plug size and using metalorganic chemical vapor deposition ͑MOCVD͒ TiN barrier. In this study, MOCVD TiN and CVD W fill followed by WCMP for plug metallization were investigated. Extensive analysis had been conducted on various types of defective W plugs. Organic contaminants ͑hydrocarbon by-products͒ in MOCVD TiN deposition would prevent W deposition taking place inside the plug. For W wise, lower process temperature, carefully adjusted WF 6 /SiH 4 and WF 6 /H 2 partial pressure ratios had demonstrated better plug fill and electrical performance ͓T. E. Clark et al., J. Vac. Sci. Technol. B 9, 1478 ͑1991͔͒. In the WCMP approach, the effects of different oxidizer concentration in slurry were characterized. Eliminating the seam formation during the CVD W process can help avoid slurry attack in WCMP. The optimized integration scheme of MOCVD TiN barrier, CVD W, and WCMP was successfully achieved and is applied on 0.20 m Logic production.

Roles of Sb addition on the corrosion resistance of the low‐alloy steel in a real tropical marine atmosphere

“…With the extension of exposure time, the corrosion rate of the two kinds of steel decreases, which is due to the protective effect of surface corrosion products on the matrix. This phenomenon is consistent with the research results of Wu et al [ 19 ] and others. [ 16,17 ] In different periods, the corrosion rate of Sb‐added steel is lower than that of Sb‐free steel.…”

“…In 2004, Nippon Steel Corporation first found [ 18 ] that adding an appropriate amount of Sb into Cu‐containing steel could promote the formation of Cu 2 Sb film, inhibit electrochemical anodic and cathodic reactions, and significantly improve the corrosion resistance of low‐alloy steel in sulfuric acid and hydrochloric acid. Wu et al [ 19 ] developed a new type of low‐alloy steel to improve its acid dew point corrosion resistance in high‐temperature and acidic environments. The results showed that the addition of Sb accelerated the redeposition of Cu during the corrosion process and then formed a rich layer of Cu and Sb on the inside of the surface film to improve the acidic corrosion resistance.…”

Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology

“…For tungsten deposition, it is conducted at the temperature range of 400-425 -C in a single wafer reactor. WF 6 /SiH 4 ratio variation is controlled for plugfilling completion [9]. By adjusting above two CVD TiN parameters, plasma treatment power and treated time, we analyzed the effects of the tungsten film on the grain size and orientation.…”

“…These changes not only become more critical for VIA filling and resistance, but also make the influences on the quality of tungsten film, and even change the seam formation in the small contact VIA size. For WCVD, the seam formation is accompanied with the subsequent nucleation and bulk deposition process on different VIA sidewalls [9]. But the seam formation beyond 100 nm technology is dependent on the VIA size and becomes critical in the VIA resistance and the quality of VIA gapfilling.…”

Numerical Simulation on Bubble Behavior of Disintegration and Dispersion in Stirring-Injection Magnesium Desulfurization Process

“…1,2) Therefore, the desulfurizer waste and the low efficiency of desulfurization are critical problems in the desulphurization process using injection magnesium method. [3][4][5] The injected bubbles are large in size and concentrate on the partial space around the nozzle when the conventional injection method is applied. The injected bubbles go up rapidly in the hot metal without adequate contacting with the hot metal, which results in the desulfurizer waste and low desulfurization efficiency in the deep desulphurization process.…”