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Chemical vapor deposition ͑CVD͒ W plugs have been widely used for device metallization with excellent conformity in small contacts/vias with high aspect ratio ͓J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicides ͑Noyes, 1991͔͒. However, some unexpected plug fill such as plug loss and key hole exposing post tungsten chemical mechanical planarization ͑WCMP͒ still happened while going to smaller plug size and using metalorganic chemical vapor deposition ͑MOCVD͒ TiN barrier. In this study, MOCVD TiN and CVD W fill followed by WCMP for plug metallization were investigated. Extensive analysis had been conducted on various types of defective W plugs. Organic contaminants ͑hydrocarbon by-products͒ in MOCVD TiN deposition would prevent W deposition taking place inside the plug. For W wise, lower process temperature, carefully adjusted WF 6 /SiH 4 and WF 6 /H 2 partial pressure ratios had demonstrated better plug fill and electrical performance ͓T. E. Clark et al., J. Vac. Sci. Technol. B 9, 1478 ͑1991͔͒. In the WCMP approach, the effects of different oxidizer concentration in slurry were characterized. Eliminating the seam formation during the CVD W process can help avoid slurry attack in WCMP. The optimized integration scheme of MOCVD TiN barrier, CVD W, and WCMP was successfully achieved and is applied on 0.20 m Logic production.

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A detailed study for the high density plasma chemical vapor deposition (HDP-CVD) process was presented to prevent metal distortion issues and metal corrosion risk. The deposition temperature increased and then saturated as the film deposited, based on the correlation of wet-etch rate and deposition temperature. The stress of HDP-CVD film also trended up, but the deposition rate decreased. Lowering of the deposition temperature of HDP-CVD film was key to preventing the metal distortion. A two-step deposition recipe with 10 s Ar cooldown was developed to solve the metal distortion issue on subquarter micron devices.

Abstruct -CMI' processes are known lo be erralic and unstable. A simple control slrutegp is to predict the rim-torun process removal rale and then adjust /he processing time bared on /he predicfion. EWMA und PCC /echniquc.r ure fwo inus/ ojien used prediclion techniques. I n /his work, we revise the PCC design lo take inlo ~C C I I N ~I /he ages offhe ahrusive pad and condirioning disc. It i s shoien thar the propused age-hosed technique cun si,qn(ficim/ly iniprove the prediction cupability und, thzu, lhc c o n l i d efjsfficiency over conven/ionul techniqiies.