Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

Famenini, Shaya; Fonstad, Clifton G.

doi:10.1109/lpt.2012.2211344

Cited by 5 publications

(7 citation statements)

References 6 publications

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“…The positional accuracy is at the limit of what would be useful in terms of the associated coupling losses, and the angular accuracy would be good enough for components that are not far from each other [5,17]. Future work involves the design of a strategy to electrically contact the microlasers.…”

Section: Resultsmentioning

confidence: 99%

“…Several approaches have been proposed to overcome the lack of an efficient, electrically pumped silicon laser that could be monolithically integrated in a silicon photonics platform. The most promising of these approaches are heteroepitaxial growth of germanium or III-V compounds on silicon [1], wafer bonding [2][3][4] and active alignment with pick and place tools [5].…”

Section: Introductionmentioning

confidence: 99%

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Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform

Juvert¹,

Zhang²,

Eddie³

et al. 2016

Opt. Express

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Abstract:The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4 • and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform

Juvert¹,

Zhang²,

Eddie³

et al. 2016

Opt. Express

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“…As an alternative, I would suggest that the Ge diffraction grating present on some III-V DFB ICL devices be bonded upside down on a Ge waveguide 67 . Another hybrid approach is to mount an edge-emitting/detecting III-V active "die" in a trench etched at one end of a group IV waveguide for end-fire coupling into the guide 68 . Membrane transfer and bonding is also a fine approach.…”

Section: Active Iii-v Devices Hybrid-integrated On Si or Gementioning

confidence: 99%

Front Matter: Volume 8633

Chang-Hasnain¹,

Koyama²,

Willner³

et al. 2013

SPIE Proceedings

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Publication of record for individual papers is online in the SPIE Digital Library. SPIEDigitalLibrary.orgPaper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print and on CD-ROM. Papers are published as they are submitted and meet publication criteria. A unique, consistent, permanent citation identifier (CID) number is assigned to each article at the time of the first publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online, print, and electronic versions of the publication. SPIE uses a six-digit CID article numbering system in which:The first four digits correspond to the SPIE volume number. The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc. The CID Number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages. Numbers in the index correspond to the last two digits of the six-digit CID Number. IntroductionOptical structures that are on the order of optical wavelength have been used to change the optical properties of the structures, similar to the use of nanostructures for quantization of electron wave. Recently, a new class of single planar layer subwavelength metastructures has emerged. The new metastructures are dielectric gratings with a large index contrast that can be designed to exhibit many extraordinary properties. For example, high contrast gratings (HCG) can provide very high reflection over a broad spectral range for light propagating in the direction orthogonal to the periodicity. It can also be designed to be a resonator with an extremely high quality factor and with user-friendly surfacenormal coupling. Furthermore, changing the grating dimension individually, an ultra-thin lens or focusing reflector with high focusing power can be obtained.This conference is the second one devoted to this theme. The presentations include a wide range of exciting advances, ranging from new physics, theories, to device applications. Various materials and fabrication technologies were used as basic platforms. In these proceedings, the readers will find discussion of novel direction selective filter elements, deep ultraviolet (DUV) polarizer and low noise infrared-mirrors. HCG designs to provide spatial mode filtering for mode control of VCSELs and wave-front-engineered mirrors are discussed. Phase engineering using HCG are explored in surface-normal transmission for solar cell concentrator optics and spiral lens applications. Using it at a glancing angle for hollow core waveguide, slow light waveguides are demonstrated. In addition, dynamically tunable all-pass filter array for fast optical beam steering is also presented.During and post conference, we received much positive ...

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“…And the heteroepitaxial growth of In x Ga 1 − x As films on Si substrates are expected to be used for the fabrication of high-efficiency solar cells [6,7], laser diodes [8,9], photodetectors [10,11], and so on. In particular, the In x Ga 1 − x As with high In composition of 0.53 is a promising candidate III-V compound semiconductor for a metal-oxide-semiconductor field-effect transistor (MOSFET) channel material due to its high electronic mobility and high breakdown field [12,13].…”

Section: Introductionmentioning

confidence: 99%