Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers

Elibol, Kenan; Nguyen, Minh D.; Hueting, R.J.E.; Gravesteijn, D.J.; Koster, Gertjan; Rijnders, Guus

doi:10.1016/j.tsf.2015.07.069

Cited by 8 publications

(8 citation statements)

References 43 publications

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“…More recently, Elibol et al employed thick (tens of nm) rutile TiO 2 layers as templates for the growth of ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) using PLD, which yielded films with an in‐plane polarization. A follow‐up work by this group replaced the thick TiO 2 buffer layer with MgO, which also yielded ferroelectric films with an in‐plane polarization (Figure c).…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

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Section: Materials and Functional Propertiesmentioning

confidence: 99%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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“…This large lattice mismatch makes the epitaxial growth of PZT on GaN a formidable challenge. Introducing a suitable buffer layer, such as rutile titanium‐oxide (TiO 2 ) or lead‐oxide (PbO) to relax the strain, has been the most promising strategy to overcome this obstacle so far.…”

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confidence: 99%

“…Therefore, integrating TMOs with GaN opens up many possibilities of novel functional device concepts. A lot of effort has been spent on the control of epitaxial growth of functional oxides, such as ferroelectric barium‐titanate (BaTiO 3 ) and Pb(Zr 1‐ x Ti x )O 3 , on GaN . However, neither high crystallinity nor direct deposition of these oxides on GaN has been achieved.…”

mentioning

confidence: 99%

“…Moreover, relatively thick buffer layers were required to relax the strain. Previously, the utilization of rutile TiO 2 as a buffer layer for the growth of PZT has been reported, but undesired crystalline orientations were present and the targeted (111) PZT phase did not grow epitaxially on GaN …”

mentioning

confidence: 99%

“…In this work, the use of advanced PLD technique to produce strain free epitaxy of an MgO ultrathin buffer layer on GaN/AlGaN/Si and the subsequent epitaxial growth of high quality PZT thin films is demonstrated. Unlike classic strain relaxation in such a TiO 2 buffer layer, which accommodates by the formation of dislocations or defects and requires certain thickness, the MgO exhibits unique stain free growth already from the first layer, enabling us to achieve epitaxial PZT films using an MgO buffer layer with almost ignorable thickness. The epitaxial PZT films exhibit good ferroelectric properties, showing a great promise for future GaN device applications.…”

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Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) Substrate

Liao

Gauquelin

et al. 2017

Adv Materials Inter

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COMMUNICATION (1 of 8)Integration of complex oxide materials with traditional electronic materials such as silicon (Si) and III-V semiconductors has attracted tremendous attention and efforts are being spent to overcome the growth challenges due to oxidation of the semiconducting materials and/or large lattice mismatch between those. [1][2][3][4][5][6][7][8][9] A breakthrough occurred for the growth of strontium-titanate (SrTiO 3 or STO) on Si, where, by introducing a 1/2 monolayer strontium (Sr) as a template, the oxidation of Si is prevented and renders the epitaxial growth of STO on Si by molecular beam epitaxy (MBE) possible. [1,2] Another strategy is to deposit an yttria-stabilized zirconia (YSZ) buffer layer to remove Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZr x Ti 1-x O 3 ) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr 1-x Ti x )O 3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr 0.52 Ti 0.48 ) O 3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.

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Impact of TiO2 buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films

et al. 2021

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Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers

Cited by 8 publications

References 43 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) Substrate

Impact of TiO2 buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films

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Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers

Cited by 8 publications

References 43 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Impact of TiO2 buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films

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Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr_0.52Ti_0.48O₃ on GaN/AlGaN/Si(111) Substrate