Integration of Germanium into Modern<scp>CMOS</scp>: Challenges and Breakthroughs

Chung, Won Sang; Wu, Heng; Ye, Peide D.

doi:10.1002/9783527811861.ch4

Advanced Nanoelectronics 2018

DOI: 10.1002/9783527811861.ch4

|View full text |Cite

Integration of Germanium into ModernCMOS: Challenges and Breakthroughs

Won Sang Chung

Heng Wu

Peide D. Ye

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 78 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Self‐Powered Graphene/Black‐Ge Photodetectors Enhanced by Simultaneous Nanotexturing and Self‐Passivation

Park,

Mariyappan,

Nguyen

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

Black germanium (Ge) exhibits exceptional light absorption, holding significant promise for optoelectronic applications. However, achieving self‐powered photodetection performance in black Ge is challenging due to its high surface recombination rate. Herein, this challenge is addressed by demonstrating self‐powered Graphene (Gr)/black‐Ge Schottky photodiodes, achieved through simultaneous nanotexturing and high‐quality self‐passivation. This approach involves utilizing reactive ion etching with Cl2 and BCl3 to achieve Cl‐passivated black Ge. Optical analysis reveals excellent optical characteristics in both Cl2‐treated and BCl3‐treated samples, including a high aspect ratio of 1.9 and a low reflectance of 1.5%. Notably, the Cl2‐treated black Ge exhibits a higher carrier lifetime of 20.4 µs compared to the 11.7 µs lifetime of the BCl3‐treated black Ge, attributed to the self‐passivation induced by Cl2 plasma, effectively mitigating defects. Surface composition analysis further confirms the substantial role of Cl in passivation. Significantly, these improved properties translate into notable advancements in device performance, including an enhancement in responsivity from 21 to 276 mA W−1 when compared to planar Gr/Ge devices. These findings underscore the potential of Cl2 RIE for developing high‐performance Ge‐based optoelectronic devices.

show abstract

Self‐Powered Graphene/Black‐Ge Photodetectors Enhanced by Simultaneous Nanotexturing and Self‐Passivation

Park,

Mariyappan,

Nguyen

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Integration of Germanium into ModernCMOS: Challenges and Breakthroughs

Cited by 1 publication

References 78 publications

Self‐Powered Graphene/Black‐Ge Photodetectors Enhanced by Simultaneous Nanotexturing and Self‐Passivation

Self‐Powered Graphene/Black‐Ge Photodetectors Enhanced by Simultaneous Nanotexturing and Self‐Passivation

Contact Info

Product

Resources

About