Integration of GMR-based spin torque oscillators and CMOS circuitry

Chen, Tingsu; Eklund, Anders; Sani, Sohrab R.; Rodriguez, Saul; Malm, B. Gunnar; Åkerman, Johan; Rusu, Ana

doi:10.1016/j.sse.2015.05.037

Cited by 12 publications

(13 citation statements)

References 27 publications

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“…This is because any parasitic will introduce an impedance mismatch much larger than a few Ohms. In this case, rather than maximizing the transferred power, an amplifier with large input impedance is preferable, since it can maximize the AC voltage delivered to the amplifier as well as the signal-to-noise ratio at the output [255].…”

Section: Stno/shno-based Applications: Issues Challenges and Devmentioning

confidence: 99%

Spin-Torque and Spin-Hall Nano-Oscillators

et al. 2016

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This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.

QS 2016

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Section: Stno/shno-based Applications: Issues Challenges and Devmentioning

confidence: 99%

Spin-Torque and Spin-Hall Nano-Oscillators

et al. 2016

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QS 2016

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“…Finally, the flip-chip-based integration of GMR spin torque oscillators (STO) onto RF CMOS integrated circuits has been reported in [ 31 ], by following a chip-on-board (CoB) approach, resulting in a GMR STO + CMOS IC pair working in the 8–16 GHz rang with 1.5 nV/

.…”

Section: Gmr Principlesmentioning

confidence: 99%

Integration of GMR Sensors with Different Technologies

Cubells-Beltrán

Reig

Madrenas

et al. 2016

Sensors

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Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the phenomenological basis, we deal on the benefits of low temperature deposition techniques regarding the integration of GMR sensors with flexible (plastic) substrates and pre-processed CMOS chips. In this way, the limit of detection can be improved by means of bettering the sensitivity or reducing the noise. We also report on novel fields of application of GMR sensors by the recapitulation of a number of cases of success of their integration with different heterogeneous complementary elements. We finally describe three fully functional systems, two of them in the bio-technology world, as the proof of how the integrability has been instrumental in the meteoric development of GMR sensors and their applications.

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“…As STT can act as negative spin wave damping, it can realize magnetic systems where spin waves, instead of being damped out, can grow exponentially in amplitude, until additional non-linear damping balances the magnetodynamics and a steady state of intense spin wave generation is realized [4][5][6]. This auto-oscillatory state is the basis for spin torque nanooscillators (STNOs) with promise for use as ultra-broadband, rapidly modulated, truly nanoscopic, and RF CMOS compatible microwave signal generators [5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Magnetic droplet solitons in orthogonal spin valves

Chung

Mohseni

Eklund

et al. 2015

Low Temperature Physics

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We review the recent experimental advancements in the realization and understanding of magnetic droplet solitons generated by spin transfer torque in orthogonal nanocontact based spin torque nanooscillators (STNOs) fabricated on extended spin valves and spin valve nanowires. The magnetic droplets are detected and studied using the STNO microwave signal and its resistance, the latter both quasistatically and time-resolved. The droplet nucleation current is found to have a minimum at intermediate magnetic field strengths and the nature of the nucleation changes gradually from a single sharp step well above this field, mode-hopping around the minimum, and continuous at low fields. The mode-hopping and continuous transitions are ascribed to droplet drift instability and re-nucleation at different time scales, which is corroborated by time-resolved measurements. We argue that the use of tilted anisotropy fixed layers could reduce the nucleation current further, move the nucleation current minimum to lower fields, and potentially remove the need for an applied magnetic field altogether. Finally, evidence of an edge mode droplet in a nanowire is presented. PACS: 75.30.Ds Spin waves;75.75.-c Magnetic properties of nanostructures.

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Integration of GMR-based spin torque oscillators and CMOS circuitry

Cited by 12 publications

References 27 publications

Spin-Torque and Spin-Hall Nano-Oscillators

Spin-Torque and Spin-Hall Nano-Oscillators

Integration of GMR Sensors with Different Technologies

Magnetic droplet solitons in orthogonal spin valves

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