Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Zhang, Hongchao; Ma, Xiangyue; Jiang, Chuanpeng; Yin, Jialiang; Lyu, Shuqin; Lu, Shengfu; Shang, Xiantao; Man, Bowen; Zhang, Cong; Li, Dandan; Li, Shuhui; Chen, Wenjing; Liu, Hongxi; Wang, Gefei; Cao, Kaihua; Wang, Zhaohao; Zhao, Weisheng

doi:10.1088/1674-4926/43/10/102501

Cited by 20 publications

(6 citation statements)

References 46 publications

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“…[31] Subsequently, the thermal stability is estimated by the thermal stability factor ∆ T = K u,eff V FM /(k B T ), considering a cylinder with typical diameter of 28 nm for MRAM nodes. [32] ∆ T of these PMA [Pt(2 −t)/Ni(t)] 4 multilayers are on the same order of magnitude as the previously reported ∆ T of the applicable MRAM. [5] Obviously, our [Pt(2 − t)/Ni(t)] 4 multilayer maintains the thermal stability and meets some application standards, which can be further optimized by MgO capping layer for practical applications.…”

Section: Methodssupporting

confidence: 84%

Spin–orbit torque in perpendicularly magnetized [Pt/Ni] multilayers

et al. 2023

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The performance of SOT in HM/FM periodic multilayers has attracted widespread attention. In this report, we have successfully fabricated a series of perpendicular magnetized [Pt(2-t)/Ni(t)]4 multilayers, and studied the SOT in the multilayers by varying the thickness of Ni layer t. The current induced magnetization switching was achieved with a critical current density of 1×107 A/cm2. The damping-like SOT efficiency ξDL was extracted from an extended harmonic Hall measurements. We demonstrate that the ξDL can be effectively modulated by t Pt/t Ni ratio of Pt and Ni in the multilayers. The SOT investigation about the [Pt/Ni]N multilayers might provide new material candidates toward practical perpendicular SOT-MRAM devices.

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Section: Methodssupporting

confidence: 84%

Spin–orbit torque in perpendicularly magnetized [Pt/Ni] multilayers

et al. 2023

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“…Despite the 1 Kb MUX array exhibiting relatively lower TMR ratios of around 80%, such a wide gap will ensure enough read margin even if we use a middle-point sense amplifier circuit design [49] . Nevertheless, by optimizing the MTJ film stacks and integration processes in the future, it is possible to further enhance the TMR ratios to approximately 200% [45] .…”

Section: Resultsmentioning

confidence: 99%

“…However, it is important to note that the SOT-MRAM is still in the research and development (R&D) phase worldwide. This is because various challenges persist, such as integration process, switching efficiency, field-free switching, and more, requiring substantial efforts for resolutions [44,45] .…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

Jiang,

Li,

Zhang

et al. 2023

J. Semicond.

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We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX array exhibits an in-die function yield of over 99.6%. Additionally, it provides a sufficient readout window, with a TMR/R P_sigma% value of 21.4. Moreover, the SOT magnetic tunnel junctions (MTJs) in the array show write error rates as low as 10−6 without any ballooning effects or back-hopping behaviors, ensuring the write stability and reliability. This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from −40 to 125 °C. Overall, the demonstrated array shows competitive specifications compared to the state-of-the-art works. Our work paves the way for the industrial-scale production of SOT-MRAM, moving this technology beyond R&D and towards widespread adoption.

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“…In recent decades, spin–orbit torque (SOT) has garnered attention in both fundamental research and technological applications for spintronics. , The manipulation of magnetization via SOT holds significant potential for spin-based memory and logic devices, aligning with power-efficient and all-electric standards. − Typically, the spin current generated by the spin Hall effect in heavy metal (HM) exerts damping-like and field-like torques on adjacent magnets, with the former playing a crucial role in magnetization switching . To date, extensive investigations have primarily focused on HM/ferromagnetic metal (FM) bilayers, finding ideal spin Hall materials with strong spin–orbit coupling (SOC) to replace traditional HMs as sources of spin current. − …”

Section: Introductionmentioning

confidence: 99%

Giant Spin–Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]_N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability

Xie,

Yang,

Chen

et al. 2024

ACS Appl. Mater. Interfaces

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Manipulating magnetization via power-efficient spin−orbit torque (SOT) has garnered significant attention in the field of spin-based memory and logic devices. However, the damping-like SOT efficiency (ξ DL ) in heavy metal (HM)/ ferromagnetic metal (FM) bilayers is relatively small due to the strong spin dephasing accompanied by additional spin polarization decay. Furthermore, the perpendicular magnetic anisotropy (PMA) originating from the HM/FM interface is constrained by the thickness of FM, which is unfavorable for thermal stability in practical applications. Consequently, it is valuable to develop systems that not only exhibit large ξ DL but also balance thermal stability. In this work, we designed antiferromagnetic-coupled [Co/ Gd] N multilayers, where staggered Co and Gd magnetic moments effectively suppress the spin dephasing and additional spin polarization decay. The ordered Co−Gd arrangements along the out-of-plane direction provide bulk PMA, endowing Pt/[Co/Gd] N high thermal stability. The SOT of Pt/[Co/Gd] N was systematically studied with N, demonstrating a significantly large ξ DL of up to 0.66. The ξ DL of Pt/[Co/Gd] N is greater than those of Pt/Co and Pt/ferrimagnetic alloys. This significant enhancement relies on the effective suppression of spin dephasing in [Co/Gd] N . Our work highlights that the antiferromagnetic-coupled [Co/Gd] N multilayer is a promising candidate for low-consumption and high-density spintronic devices.

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Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Cited by 20 publications

References 46 publications

Spin–orbit torque in perpendicularly magnetized [Pt/Ni] multilayers

Spin–orbit torque in perpendicularly magnetized [Pt/Ni] multilayers

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

Giant Spin–Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]_N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability

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Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Cited by 20 publications

References 46 publications

Spin–orbit torque in perpendicularly magnetized [Pt/Ni] multilayers

Spin–orbit torque in perpendicularly magnetized [Pt/Ni] multilayers

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

Giant Spin–Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability

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Product

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Giant Spin–Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]_N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability