1990
DOI: 10.1109/22.58641
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Integration of high-Q GaAs varactor diodes and 0.25 mu m GaAs MESFET's for multifunction millimeter-wave monolithic circuit applications

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Cited by 7 publications
(2 citation statements)
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“…Thus, the important parameters in such devices are the capacitance–voltage characteristics as well as the breakdown voltage. Different varactor structures with certain limitations in increasing capacitance ratio and breakdown voltage have been reported to improve their capability as a tunable device such as abrupt junction, MOS, MIS, planar structure, and quantum barrier . Uniformly doped and linearly graded junctions are not the only possible doping profiles in varactor diodes.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the important parameters in such devices are the capacitance–voltage characteristics as well as the breakdown voltage. Different varactor structures with certain limitations in increasing capacitance ratio and breakdown voltage have been reported to improve their capability as a tunable device such as abrupt junction, MOS, MIS, planar structure, and quantum barrier . Uniformly doped and linearly graded junctions are not the only possible doping profiles in varactor diodes.…”
Section: Introductionmentioning
confidence: 99%
“…In order to increase output power and to buffer the VCO chip, a driver amplifier (figure 3) and a power amplifier (figure 4) were developed. The amplifier chips are based on Alpha's standard 0.25 x 400 micron power MESFET process.…”
Section: Figure 2 38 Ghz Mmic Vcomentioning
confidence: 99%