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The reliability of GaN-based transistors has improved over the last decade into a system insertion ready technology. Material quality and uniformity has played a strong role in this evolution. Identifying and understanding the physical evolution of the degradation mechanisms provides a basis for evaluating device lifetimes. Recent life testing has demonstrated sufficient lifetime for most applications.

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The inclusion of Ge at the 5i-Si0 2 interface is known (1) to shif t the threshold voltage of an N-channel MOST in the positive direction by a controlled amount , changing its operation from the normal depletion to the enhancement mode. The purpose of this paper is to describe the changes in the standard MOS technology which make feasible the manufacture of an enhancement-depletion, N-channel type cir cuit with a potential for high switching speeds.The results of measurements, ca r ried out to characterize the interface properties of such modified structures, throw some light on the possible nature of tbis effect.