2002
DOI: 10.1109/20.999132
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Integration of magneto-optical garnet films by metal-organic chemical vapor deposition

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Cited by 41 publications
(14 citation statements)
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“…CeYIG is a candidate material for magnetooptical devices in the near IR. (CeYIG films [4,5,[69][70][71] differ from STF in having an in-plane easy axis. )…”
Section: E Optical and Magnetic Characterizationmentioning
confidence: 99%
“…CeYIG is a candidate material for magnetooptical devices in the near IR. (CeYIG films [4,5,[69][70][71] differ from STF in having an in-plane easy axis. )…”
Section: E Optical and Magnetic Characterizationmentioning
confidence: 99%
“…[1][2][3][4][5] Doping Y 3 Fe 5 O 12 (YIG) with Ce has been found to significantly enhance the near infrared Faraday rotation and magneto-optical figure of merit (FoM) of this material, 3,6-8 making it highly promising for nonreciprocal photonic 9 device applications, such as optical isolators and circulators. 1,[10][11][12][13][14][15][16] The magneto-optical properties of Ce:YIG thin films are strongly dependent on the partial pressure of oxygen during fabrication, which is attributed to the variation of Ce 3þ and Ce 4þ populations.…”
mentioning
confidence: 99%
“…First principles calculation on the magnetic, optical properties and oxygen vacancy effect of Ce x Y 32x Fe 5 We report a first principles study on the magnetic and optical properties of Ce substituted yttrium iron garnet (Ce x Y 3Àx Fe 5 O 12 ) (Ce:YIG) (x ¼ 0.125, 0.25, 0.5, and 1.0). Using density functional theory with Hubbard-U corrections, we demonstrate that Ce 3þ -Fe 3þ (tetrahedral) charge transfer is the dominating mechanism of enhanced near infrared absorption in Ce:YIG.…”
mentioning
confidence: 99%
“…Epitaxial MgO buffer layers, as thin as 4.5 nm, grown upon the surface of GaAs have been demonstrated to adequately protect GaAs and preserve the integrity of a quantum well at temperatures in excess of 800 • C [13]. It has further been demonstrated that high-quality YIG and CeYIG [14] may be grown upon MgO and hence it is anticipated that the use of a MgO buffer layer may provide protection for the semiconductor surface should it prove necessary.…”
Section: Discussionmentioning
confidence: 99%