Integration of thin layers of single-crystalline InP with flexible substrates

Chen, Wayne; Chen, Peng; Pulsifer, J.; Alford, Terry; Kuech, T. F.; Lau, S. S.

doi:10.1063/1.2937409

Applied Physics Letters

2008

DOI: 10.1063/1.2937409

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Integration of thin layers of single-crystalline InP with flexible substrates

Wayne Chen

Peng Chen

J. Pulsifer

et al.

Abstract: Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180°C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted int… Show more

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Cited by 14 publications

(17 citation statements)

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“…3 Recent work with ion-cutting and adhesive bonding has shown that a prefabricated device layer transfer, i.e., the transfer of a layer with a device already fabricated on it, may be feasible in a double-flip transfer process, allowing for the integration of high-speed, InP-based devices with materials such as flexible substrates. 4 Such a process would not require any further device-fabrication processes ͑such as epitaxial regrowth͒ after transfer. However, to exfoliate an implanted InP layer using the ion-cut method, it is generally necessary to implant hydrogen ions at a high dosage of several times 10 16 /cm 2 into the semiconductor donor.…”

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InP Layer Transfer with Masked Implantation

Chen¹,

Bandaru

Tang

et al. 2009

Electrochem. Solid-State Lett.

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InP layer transfer with masked implantation was investigated to eliminate ion-implantation induced damage involved in the ion-cut process. InP donor wafers were selectively implanted with hydrogen through a mask at a dose of 8.5 ϫ 10 16 ions/cm 2 at 160 keV. The layers which were subsequently mechanically exfoliated were characterized by large pyramidal protrusions on the surface, associated with the unimplanted regions. This undesirable morphology was bypassed through the inclusion of a selective etch-stop layer. The resulting structures possessed flat surfaces suitable for further bonding. This process enables the transfer of finished devices, unaffected by ion-implantation, onto a variety of desirable substrates.

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confidence: 99%

InP Layer Transfer with Masked Implantation

Chen¹,

Bandaru

Tang

et al. 2009

Electrochem. Solid-State Lett.

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“…7 A major drawback to the process is that the implantation damage leads to electrically active defects which are difficult to eliminate. Bulk characteristics cannot be fully restored even after annealing to 600°C.…”

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“…SU-8 is a suitable adhesive for ion-cutting provided temperatures are kept below 200°C. 7 Sapphire was chosen because of its ultraviolet ͑UV͒ transparency. Bonding was done following SU-8 spincoat and solvent evaporation at 150°C.…”

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High electron mobility transistors on plastic flexible substrates

Chen

Alford

Kuech

et al. 2011

Applied Physics Letters

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The double-flip transfer of indium phosphide ͑InP͒ based transistors onto plastic flexible substrates was demonstrated. Modulation doped field effect transistor layers, epitaxially grown on InP bulk substrates, were transferred onto sapphire using a masked ion-cutting process. Following layer transfer, transistors were fabricated at low temperatures ͑Յ150°C͒. The device structure was then bonded to flexible substrate, and laser ablation was used to separate the initial bond. The transferred transistors were characterized and exhibited high field-effect mobility ͑ average ϳ 2800 cm 2 V −1 s −1 ͒.Due to bendability, toughness, and light weight, flexible substrates can be useful in a wide variety of applications such as smart clothing, energy panels, biosensors, and flexible displays. 1 To form circuit elements in these applications, thin film transistors are required. Amorphous silicon and organic semiconductors are commonly used because their low deposition temperatures are compatible with plastic substrates such as polyethylene naphthalate ͑PEN͒, which has temperature tolerance Ͻ200°C. 2 The low carrier mobility of these materials ͑typically Ͻ10 cm 2 V −1 s −1 ͒; however, limits their potential for use in high-speed applications. 3,4 Ion-cutting has proven useful for integration of singlecrystal semiconductors with alternative substrates at various temperatures, depending on implant and annealing conditions. 5 Ion-cutting involves proton ͑H + ͒ implantation, at high doses ͑ϳ10 17 cm −2 ͒ into a donor, followed by wafer bonding of the donor to an acceptor substrate. Upon annealing, the hydrogen segregated to the implantation-induced damage region nucleate into gas bubbles, resulting in thinfilm layer separation onto the acceptor. 6 A key benefit to ion-cutting is that the donor can be reused after the process.Recently, indium phosphide ͑InP͒ transfer onto flexible substrate was demonstrated in a double-flip process involving ion-cutting and adhesive bonding. 7 A major drawback to the process is that the implantation damage leads to electrically active defects which are difficult to eliminate. Bulk characteristics cannot be fully restored even after annealing to 600°C. 8 In previous experiments, we have shown that devices fabricated on ion-cut InP layers either function with undesired characteristics ͑photodetectors͒ or do not function at all ͑transistor͒. 9,10Masked ion-cutting can mitigate implantation damage by protecting critical regions from impinging ions with a thick, removable mask. 11 These protected areas are transferred along with adjacent implanted areas during exfoliation. In the masked ion-cutting of ͑100͒ InP, protected areas transfer with pyramidal protrusions associated with the exfoliation process, which can be removed following transfer. 12 In this letter, we used masked ion-cutting in a double-flip transfer to enable integration of InP-based high electron mobility transistor ͑HEMTs͒ on PEN substrates.Modulation doped field effect transistor ͑MODFET͒ layers were grown on InP via metal organic vap...

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“…Therefore, we must use III-V compound semiconductors for light sources, and various studies have recently been conducted using III-V semiconductor lasers on Si substrates. [3][4][5][6][7][8] Semiconductor quantum dot (QD) lasers, which have various advantages including low threshold current and high temperature stability, utilize the discrete electrical density of states in QDs (Ref. 9) and are therefore suitable for high-density integration.…”

mentioning

confidence: 99%

1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

Tatsumi

Tanabe

Iwamoto

et al. 2012

Journal of Applied Physics

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Integration of thin layers of single-crystalline InP with flexible substrates

Cited by 14 publications

References 18 publications

InP Layer Transfer with Masked Implantation

InP Layer Transfer with Masked Implantation

High electron mobility transistors on plastic flexible substrates

1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

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