Integration platform for optical switching of magnetic elements

Sobolewska, Elżbieta Karolina; Pelloux-Prayer, J.; Becker, Hanna; Li, Guanqiao; Davies, C. S.; Krückel, Clemens J.; Felix, Luis; Olivier, A.; Sousa, Rosiléa Alves de; Prejbeanu, I. L.; Kiriliouk, Andrei I.; Thourhout, Dries Van; Rasing, T.H.M.; Moradi, Farshad; Heck, Martijn J. R.

doi:10.1117/12.2567662

Cited by 9 publications

(8 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recent advancements in AOS were embodied in the discovery of single-pulse AOS in more process-compatible synthetic ferrimagnets, such as cobalt (Co)/gadolinium (Gd) [17] and [Co/terbium (Tb)] m [18,19] multilayered material platforms, having m repetition(s). This approach provides low switching energy [20] and is compatible with integration to state-of-the-art spintronic building blocks [19,[21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Integrated Hybrid Plasmonic-Photonic Device for All-Optical Switching and Reading of Spintronic Memory

Pezeshki

Lavrijsen

et al. 2023

Phys. Rev. Applied

View full text Add to dashboard Cite

published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

show abstract

Section: Introductionmentioning

confidence: 99%

Integrated Hybrid Plasmonic-Photonic Device for All-Optical Switching and Reading of Spintronic Memory

Pezeshki

Lavrijsen

et al. 2023

Phys. Rev. Applied

View full text Add to dashboard Cite

show abstract

“…Based on this notion, the Co/Gd bilayer system has a high potential to allow for a hybrid opto-spintronic racetrack memory platform based on AOS and domain wall motion 5 . a) p.li1@tue.nl b) m.j.g.peeters@tue.nl c) y.l.w.v.hees@tue.nl d) r.lavrijsen@tue.nl e) b.koopmans@tue.nl Despite that AOS shows a lower energy footprint than the STT/SOT-MRAM 1-3 , the high power of the light pulse due to its short pulse requirement for AOS 16 might lead to significant non-linear absorption loss (such as two-photon absorption and subsequent free-carrier absorption) [17][18][19][20] when used in photonic integrated circuits. Therefore, lowering the power, i.e.…”

Section: Introductionmentioning

confidence: 99%

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet

Li,

Peeters,

van Hees

et al. 2021

Preprint

View full text Add to dashboard Cite

A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a picosecond time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we explore the use of dielectric coatings to increase the light absorption by the magnetic metal layer based on the principle of constructive interference. We experimentally show that the switching energy oscillates with the dielectric layer thickness following the light interference profile as obtained from theoretical calculations. Furthermore, the switching threshold fluence can be reduced by at least 80% to 0.6 mJ/cm 2 using two dielectric SiO 2 layers sandwiching the metal stack, which scales to 15 fJ of incident energy for a cell size of 50 2 nm 2 .

show abstract

“…[19] This can be useful as a new generation of ultrafast magnetic memory, as well as a data buffer between electronics and integrated photonics. [14,20,21] Recently, a synthetic ferrimagnetic system based on a Pt/Co/Gd- [18,22] layered structure has shown high robustness [23] for such a hybrid integration. These kinds of synthetic ferrimagnets have some distinct advantages over RE-TM alloys.…”

mentioning

confidence: 99%

Ultrafast Racetrack Based on Compensated Co/Gd‐Based Synthetic Ferrimagnet with All‐Optical Switching

Koopmans

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

the Dzyaloshinskii-Moriya interaction (DMI) [6][7][8] with synthetic antiferromagnets (SAFs), which resulted in reported DW velocities close to 750 m s -1 . [9] Despite the large improvement, the energy efficiency is still limited due to the weak strength of the antiferromagnetic (AF) coupling. Therefore, the materials platform of rare earth (RE)-transition metal (TM) compounds garnered considerable attention, [1] promising faster CIDWM due to the much stronger direct AF coupling than the indirect exchange coupling [10] utilized in SAFs. Furthermore, the SOTs used to drive the DW promise to be highly efficient in the RE-TM systems as a result of the long spin coherence length. [11] Cosequently, high velocity CIDWM has been reported in Co-Gdbased ferrimagnetic alloy systems [12,13] when the angular momentum in the magnetic material is compensated, being at least a factor of three faster than that of the previously reported SAFs.Besides the efficient CIDWM, single pulse all-optical switching (AOS) of the magnetization [14,15] in the RE-TM systems has obtained significant attention thanks to its subpicosecond [16] energy efficient [14,17,18] magnetization switching enabled by the ultrafast angular momentum transfer upon laser excitation. [19] This can be useful as a new generation of ultrafast magnetic memory, as well as a data buffer between electronics and integrated photonics. [14,20,21] Recently, a synthetic ferrimagnetic system based on a Pt/Co/Gd- [18,22] layered structure has shown high robustness [23] for such a hybrid integration. These kinds of synthetic ferrimagnets have some distinct advantages over RE-TM alloys. For instance, AOS is not limited by the exact composition. [24] They also withstand thermal annealing [25] and offer easier magnetic composition control at wafer scale than the alloy system, as well as better access to interface engineering. Therefore, it has been proposed that such a materials platform has high potential to realize a hybrid integration of DW memory in photonic platforms to further enhance their storage density. [20,26] So far, the CIDWM of Co/Gd bilayers [26,27] has been investigated. However, the highest reported velocity, achieved at cryogenic conditions, [27] was several times lower than that reported in alloys, [12] in part due to large net angular momentum, low compensation temperature as well as DW pinning effects. In this report, we therefore propose a materials platform based on the [Co/Gd] 2 synthetic ferrimagnet capable of accommodating both efficient CIDWM of over 2 km s -1 ) at room temperature

show abstract

Integration platform for optical switching of magnetic elements

Cited by 9 publications

References 0 publications

Integrated Hybrid Plasmonic-Photonic Device for All-Optical Switching and Reading of Spintronic Memory

Integrated Hybrid Plasmonic-Photonic Device for All-Optical Switching and Reading of Spintronic Memory

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet

Ultrafast Racetrack Based on Compensated Co/Gd‐Based Synthetic Ferrimagnet with All‐Optical Switching

Contact Info

Product

Resources

About