Intense electroluminescence from ZnO nanowires

Shan, Chongxin; Shan, Chongxin; Jiang, Mingming; Qin, Jieming; Hu, Guangchong; Wang, Shuangpeng; Hong-yan, MA; Jia, Xiaopeng; Shen, Dezhen

doi:10.1039/c5tc00317b

Cited by 15 publications

(9 citation statements)

References 36 publications

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“…Owing to its wide band gap (3.37 eV) and high exciton binding energy (60 meV), ZnO has been considered to be the most important optoelectronic semiconductor material, − especially for the next generation solid-state lighting sources. − However, the realization of stable and reproducible p-ZnO is still challenging, which hinders the further development of ZnO-based homogeneous junction devices. , Therefore, the ZnO-based heterojunction has only gradually become an important device structure. , …”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Electroluminescence from ZnS@ZnO Core–Shell Nanowires/p-GaN Introduced by Exciton Localization

Fang

Wei

Yang

et al. 2016

ACS Appl. Mater. Interfaces

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We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

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Section: Introductionmentioning

confidence: 99%

Ultraviolet Electroluminescence from ZnS@ZnO Core–Shell Nanowires/p-GaN Introduced by Exciton Localization

Fang

Wei

Yang

et al. 2016

ACS Appl. Mater. Interfaces

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“…Due to the difficulty in obtaining stable and repeatable p-type ZnO thin films, there is still a weak electroluminescence (EL) phenomenon in ZnO-base homogeneous LEDs. To overcome this problem, the n-ZnO/p-GaN structure was prepared in [55]. Because of the lattice mismatch between the materials, the quantum efficiency decreased and the relatively high emission open current density made the luminescence efficiency lower.…”

Section: H-bn/iii-v Ledmentioning

confidence: 99%

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

et al. 2022

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Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.

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“…Even though GaN-based UV LED technology is more established, GaN has a much lower UV light emission efficiency than ZnO because of the lower exciton binding energy (∼25 meV). At present, the p-ZnO/n-ZnO homojunction LEDs that can emit UV light have been realized. , However, ZnO-based homojunction LEDs still suffer from weak electroluminescence (EL) because it is difficult to obtain stable and repeatable p-type ZnO films. To overcome this problem, numerous studies have been devoted to fabricate heterojunction LEDs by replacing p-type ZnO with other p-type materials, and the most often used configuration is the n-ZnO/p-GaN heterostructure for their similar physical properties .…”

Section: Introductionmentioning

confidence: 99%

High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions

Deng

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

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Effective ultraviolet light-emitting diodes (LEDs) were fabricated by clamping the n-ZnO films on the top of p-hBN/p-GaN/sapphire substrates. An ultraviolet emission originating from ZnO was measured from the diode under a forward bias, the electroluminescence (EL) spectra of which show a peak wavelength of ∼376 nm with a narrow full-width at half maximum of ∼12 nm. Compared with the reference diode fabricated by directly growing n-ZnO on the p-hBN substrates using metal–organic chemical vapor deposition, the proposed diode showed a dramatic increment of the EL intensity; meanwhile, its emission onset lowered down considerably. The improved optical property of the proposed LED is mainly ascribed to suppressing the formation of the BNO-related layer at the n-ZnO/p-hBN interface. The present work provides a simple and feasible approach for developing advanced ZnO-based optoelectronic devices.

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Intense electroluminescence from ZnO nanowires

Abstract: Intense electroluminescence has been obtained from ZnO nanowires with holes injected from p-ZnO:Sb prepared via a high pressure high temperature method.

Cited by 15 publications

References 36 publications

Ultraviolet Electroluminescence from ZnS@ZnO Core–Shell Nanowires/p-GaN Introduced by Exciton Localization

Ultraviolet Electroluminescence from ZnS@ZnO Core–Shell Nanowires/p-GaN Introduced by Exciton Localization

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions

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